Abstract
A theoretical method to derive the projected range distribution in a double-layer substrate such as a SiO2-Si substrate is presented. Validity of the analysis is checked by the C-V measurement. One of the conclusions by this analysis is that a discontinuity in the ion concentration generally exists at the interface of the layers.
Next, the optimum implant conditions to control the gate threshold voltage of MOSFET’s are theoretically predicted using the above analysis. Some of the optimum conditions show good agreement with what have been found empirically.
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© 1975 Plenum Press, New York
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Ishiwara, H., Furukawa, S., Yamada, J., Kawamura, M. (1975). Projected Range Distribution of Implanted Ions in a Double-Layer Substrate. In: Namba, S. (eds) Ion Implantation in Semiconductors. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-2151-4_53
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DOI: https://doi.org/10.1007/978-1-4684-2151-4_53
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-2153-8
Online ISBN: 978-1-4684-2151-4
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