Abstract
Ion implantation is a nonequilibrium process. It is possible to implant materials with impurities to concentration levels which far exceed the solid solubilities. The return of the system to thermodynamic equilibrium is often accomplished by precipitation of the implanted species or a compound involving atoms of both the host and the implanted species. This process may involve very long time scales when taking place at room temperature or it may take place dynamically during the implantation. In order to understand the metallurgy of implanted systems at high concentrations, an understanding of the basic phenomena controlling second phase precipitation is necessary. These processes will be briefly reviewed and illustrated with examples of data from implanted systems.
This article is based on a lecture delivered at a N.A.T.O. Advanced Study Institute held in Aleria, Corsica between September 10th and September 23rd, 1978.
This work supported by the United States Department of Energy under Contract #AT(29-1)-789.
A U.S. DOE Facility
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
Preview
Unable to display preview. Download preview PDF.
References
J. A. Borders, Annual Reviews of Materials Science, Vol. 9, in the press.
M. Hanson, Constitution of Binary Alloys, McGraw-Hill, New York, 1958
R. P. Elliot, Constitution of Binary Alloys, First Supplement, McGraw-Hill, New York, 1965.
F. A. Shuiik, Constitution of Binary Alloys, Second Supplement, McGraw-Hill, New York, 1969.
P. Duwez, Progress in Solid State Chemistry, Vol. 3? ed. by H. Reiss, p. 377? Psrgamon Press, New York, 1967.
W. Hume-Rothery, R. E. Smallman and C. W. Haworth, The Structure of Metals and Alloys, Institute of Metals, London, 1969
S. lyfeider, A. S. Nowick and H. Widner, Acta metall. 15, 203(1967)
J. M. Ibate, J. A. Borders, A. G. Cullis and J. K. Hirvonen, Appl. Phys. Lett., 30, 365 (1977).
Physical Metallurgy, ed. by R. W. Cahn, North-Holland, Amsterdam, 1970.
J. Crank, The Mathematics of Diffusion, Oxford Univ. Press, London, 1956
S. M. Myrers, S. T. Picraux and T. S. Prevender, Phys. Rev. B, 187. 3953 (1974).
J. A. Borders and S. T. Picraux, these proceedings.
G. W. Arnold and J. A. Borders, J. Appl Phys. 48, 1488 (1977)
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 1980 Plenum Press, New York
About this chapter
Cite this chapter
Borders, J.A. (1980). Precipitation Processes in Implanted Materials. In: Perez, A., Coussement, R. (eds) Site Characterization and Aggregation of Implanted Atoms in Materials. NATO Advanced Study Institutes Series, vol 47. Springer, Boston, MA. https://doi.org/10.1007/978-1-4684-1015-0_16
Download citation
DOI: https://doi.org/10.1007/978-1-4684-1015-0_16
Publisher Name: Springer, Boston, MA
Print ISBN: 978-1-4684-1017-4
Online ISBN: 978-1-4684-1015-0
eBook Packages: Springer Book Archive