Site Characterization and Aggregation of Implanted Atoms in Materials

  • A. Perez
  • R. Coussement

Part of the NATO Advanced Study Institutes Series book series (NSSB, volume 47)

Table of contents

  1. Front Matter
    Pages i-xi
  2. General Introduction

    1. A. Cachard
      Pages 1-4
  3. Basic Notions on Implantation

    1. Front Matter
      Pages 5-5
    2. J. A. Davies, L. M. Howe
      Pages 7-32
    3. G. Dearnaley
      Pages 33-63
    4. R. Coussement
      Pages 65-69
  4. Characterization by Nuclear Methods of Isolated Implanted Atom Sites

    1. Front Matter
      Pages 71-71
    2. Ekkehard Recknagel
      Pages 95-110
    3. H. de Waard
      Pages 111-138
    4. D. Quitmann
      Pages 139-156
    5. I. Berkès
      Pages 175-187
    6. N. J. Stone
      Pages 189-204
    7. H. de Waard
      Pages 205-222
    8. Ekkehard Recknagel
      Pages 223-240
  5. Implantation Effects At Higher Concentrations, Aggregation Phenomena

    1. Front Matter
      Pages 263-263
    2. J. Leteurtre
      Pages 265-294

About this book

Introduction

Explosive developments in microelectronics, interest in nuclear metallurgy, and widespread applications in surface science have all produced many advances in the field of ion implantation. The research activity has become so intensive and so broad that the field has become divided into many specialized subfields. An Advanced Study Institute, covering the basic and common phenomena of aggregation, seems opportune for initiating interested scientists and engineers into these various active subfields since aggregation usually follows ion implantation. As a consequence, Drs. Perez, Coussement, Marest, Cachard and I submitted such a pro­ posal to the Scientific Affairs Division of NATO, the approval of which resulted in the present volume. For the physicist studying nuclear hyperfine interactions, the consequences of aggregation of implanted atoms, even at low doses, need to be taken into account if the results are to be correctly interpreted. For materials scientists and device engineers, under­ standing aggregation mechanisms and methods of control is clearly essential in the tailoring of the end products.

Keywords

atom atoms fields metals nuclear physics physics radiation solid state physics spectroscopy

Editors and affiliations

  • A. Perez
    • 1
  • R. Coussement
    • 2
  1. 1.Université Claude Bernard Lyon IVilleurbanneFrance
  2. 2.University of LeuvenLeuvenBelgium

Bibliographic information

  • DOI https://doi.org/10.1007/978-1-4684-1015-0
  • Copyright Information Springer-Verlag US 1980
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4684-1017-4
  • Online ISBN 978-1-4684-1015-0
  • Series Print ISSN 0258-1221
  • About this book