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  • Conference proceedings
  • © 1985

Proceedings of the 17th International Conference on the Physics of Semiconductors

San Francisco, California, USA August 6–10, 1984

Editors:

  1. James D. Chadi

    1. Xerox Palo Alto Research Center, Palo Alto, USA

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    You can also search for this editor in PubMed   Google Scholar

  2. Walter A. Harrison

    1. Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA

    View editor publications

    You can also search for this editor in PubMed   Google Scholar

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Table of contents (353 papers)

  1. Front Matter

    Pages i-xxxvi
    PDF

  2. Surfaces

    1. Front Matter

      Pages 1-1
      PDF

    2. Scanning Tunneling Microscopy

      1. Scanning Tunneling Microscopy
        • G. Binnig, H. Rohrer
        Pages 3-10
      2. Theory of Voltage-Dependent Scanning-Tunneling Microscopy of a Crystal Surface: Graphite
        • A. Selloni, P. Carnevali, E. Tosatti, C. D. Chen
        Pages 11-14

    3. Si and Ge(111) Surfaces

      5. Inverse Photoemission at Semiconductor Surfaces
        • F. J. Himpsel, D. Straub, Th. Fauster
        Pages 39-42
      6. Theoretical Study of Stacking Faults in Silicon
        • M. Y. Chou, Steven G. Louie, Marvin L. Cohen
        Pages 43-46
      7. Electron-Phonon and Correlation Effects at Silicon Surfaces
        • F. Flores, C. Tejedor, E. Louis
        Pages 47-50

    4. Si and Ge(100) Surfaces

      1. A Total Energy-Renormalization Group Approach to the Phase Transition of Solid Surfaces
        • J. Ihm, D. H. Lee, J. D. Joannopoulos, J. J. Xiong
        Pages 51-54
      3. The Atomic Geometry of Si(100)-(2x1) Revisited
        • C. B. Duke, A. Paton, B. W. Holland
        Pages 59-62
      4. Electronic Excitations on Semiconductor (100) Surfaces
        • H. H. Farrell, J. Q. Broughton, J. A. Schaefer, J. C. Bean
        Pages 63-65

    5. III-V Semiconductor Surfaces

      1. The Electronic Structure of Polar GaAs Surfaces
        • R. D. Bringans, R. Z. Bachrach
        Pages 67-72
      2. Low-Energy Electron Diffraction Study of the (2x2) GaAs(111) Surface
        • G. Xu, Y. Huang, W. N. Mei, B. W. Lee, S. Y. Tong
        Pages 73-76
      3. Reconstructions of the GaAS(100) Surface: Core-Level Photoemission Study
        • A. D. Katnani, H. W. Sang Jr., R. S. Bauer
        Pages 77-80
      4. Atomic Geometry and Dynamics of the InAs(110) Surface
        • L. Smit, J. F. van der Veen
        Pages 81-84
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About this book

The Proceedings of the 17th International Conference on the Physics of Semiconductors are contained in this volume. A record 1050 scientists from 40 countries participated in the Conference which was held in San Francisco August 6·1 0, 1984. The Conference was organized by the ICPS Committee and sponsored by the International Union of Pure and Applied Physics and other professional, government, and industrial organizations listed on the following pages. Papers representing progress in all aspects of semiconductor physics were presented. Far more abstracts (765) than could be presented in a five-day meeting were considered by the International Program Committee. A total of 350 papers, consisting of 5 plenary, 35 invited, and 310 contributed, were presented at the Conference in either oral or poster sessions. All but a few of the papers were submitted and have been included in these Proceedings. An interesting shift in subject matter, in comparison with earlier Conferences, is manifested by the large number of papers on surfaces, interfaces, and quantum wells. To facilitate the use of the Proceedings in finding closely related papers among the sometimes relatively large number of contributions within a main subject area, we chose not to arrange the papers strictly according to the Conference schedule. We have organized the book, as can be seen from the Contents, into specific subcategories and subdivisions within each major category. Plenary and invited papers have been placed together with the appropriate contributed papers.
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Keywords

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Editors and Affiliations

  • Xerox Palo Alto Research Center, Palo Alto, USA

    James D. Chadi

  • Department of Applied Physics W.W. Hansen Laboratories, Stanford University, Stanford, USA

    Walter A. Harrison

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Bibliographic Information

  • Book Title: Proceedings of the 17th International Conference on the Physics of Semiconductors

  • Book Subtitle: San Francisco, California, USA August 6–10, 1984

  • Editors: James D. Chadi, Walter A. Harrison

  • DOI: https://doi.org/10.1007/978-1-4615-7682-2

  • Publisher: Springer New York, NY

  • eBook Packages: Springer Book Archive

  • Copyright Information: Springer Science+Business Media New York 1985

  • Softcover ISBN: 978-1-4615-7684-6Published: 18 January 2014

  • eBook ISBN: 978-1-4615-7682-2Published: 01 December 2013

  • Edition Number: 1

  • Number of Pages: LXXII, 1656

  • Number of Illustrations: 107 b/w illustrations

  • Topics: Condensed Matter Physics

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Buy it now

eBook USD 129.00
Price excludes VAT (USA)
  • Available as PDF
  • Read on any device
  • Instant download
  • Own it forever
Softcover Book USD 169.99
Price excludes VAT (USA)
  • Compact, lightweight edition
  • Dispatched in 3 to 5 business days
  • Free shipping worldwide - see info

Tax calculation will be finalised at checkout

Other ways to access

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