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Part of the book series: NATO ASI Series ((NSSB,volume 307))

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Abstract

Hot carrier effects are the subject of much interest in the study of transport properties in semiconductor heterostructures because of their importance in device reliability. The present work is devoted to some aspects of their optical behaviour. Apart from the intrinsic interest of light emission from hot levels, this phenomenon may reveal new information on the electronic structure and be used as a powerful instrument from the spectroscopic point of view. Advantages of this technique arise from the state of non equilibrium of the recombining carriers which lead to clearer selection rules and, eventually cast new light on the phonon-exciton interaction.

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© 1993 Springer Science+Business Media New York

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Calle, F., López, C., Meseguer, F., Viña, L., Calleja, J.M., Tejedor, C. (1993). Hot Exciton Luminescence in Quantum Wells as a Spectroscopic Tool. In: Balkan, N., Ridley, B.K., Vickers, A.J. (eds) Negative Differential Resistance and Instabilities in 2-D Semiconductors. NATO ASI Series, vol 307. Springer, Boston, MA. https://doi.org/10.1007/978-1-4615-2822-7_29

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  • DOI: https://doi.org/10.1007/978-1-4615-2822-7_29

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4613-6220-3

  • Online ISBN: 978-1-4615-2822-7

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