Negative Differential Resistance and Instabilities in 2-D Semiconductors

  • N. Balkan
  • B. K. Ridley
  • A. J. Vickers

Part of the NATO ASI Series book series (NSSB, volume 307)

Table of contents

  1. Front Matter
    Pages i-ix
  2. J. H. Wolter, J. E. M. Haverkort, P. Hendriks, E. A. E. Zwaal
    Pages 109-126
  3. A. J. Vickers, E. S.-M. Tsui, A. Straw
    Pages 203-213
  4. C. Canali, C. Tedesco, E. Zanoni, M. Manfredi, A. Paccagnella
    Pages 215-249
  5. Joachim Peinke, Wilfried Clauss, Achim Kittel, Jürgen Parisi, Uwe Rau, Reinhard Richter
    Pages 261-268
  6. Ralf Symanczyk, Steffen Knigge, Dieter Jäger
    Pages 269-282
  7. A. Da Cunha, A. Straw, N. Balkan
    Pages 283-304
  8. T. K. Higman, Jihong Chen, M. S. Hagedorn, R. T. Fayfield
    Pages 305-315
  9. Marion Asche
    Pages 317-333
  10. H. P. Hughes, R. E. Tyson, L. C. Ó. Súilleabháin, R. J. Stuart
    Pages 351-360
  11. F. Calle, C. López, F. Meseguer, L. Viña, J. M. Calleja, C. Tejedor
    Pages 421-430
  12. Back Matter
    Pages 439-443

About this book


Instabilities associated with hot electrons in semiconductors have been investigated from the beginning of transistor physics in the 194Os. The study of NDR and impact ionization in bulk material led to devices like the Gunn diode and the avalanche-photo-diode. In layered semiconductors domain formation in HEMTs can lead to excess gate leakage and to excess noise. The studies of hot electron transport parallel to the layers in heterostructures, single and multiple, have shown abundant evidence of electrical instability and there has been no shortage of suggestions concerning novel NDR mechanisms, such as real space transfer, scattering induced NDR, inter-sub band transfer, percolation effects etc. Real space transfer has been exploited in negative-resistance PETs (NERFETs) and in the charge-injection transistor (CHINT) and in light emitting logic devices, but far too little is known and understood about other NDR mechanisms with which quantum well material appears to be particularly well-endowed, for these to be similarly exploited. The aim of this book is therefore to collate what is known and what is not known about NDR instabilities, and to identify promising approaches and techniques which will increase our understanding of the origin of these instabilities which have been observed during the last decade of investigations into high-field longitudinal transport in layered semiconductors. The book covers the fundamental properties of hot carrier transport and the associated instabilities and light emission in 2-dimensional semiconductors dealing with both theory and experiment.


Energie Semiconductor electrons logic transistor

Editors and affiliations

  • N. Balkan
    • 1
  • B. K. Ridley
    • 1
  • A. J. Vickers
    • 1
  1. 1.University of EssexColchesterUK

Bibliographic information

  • DOI
  • Copyright Information Plenum Press, New York 1993
  • Publisher Name Springer, Boston, MA
  • eBook Packages Springer Book Archive
  • Print ISBN 978-1-4613-6220-3
  • Online ISBN 978-1-4615-2822-7
  • Series Print ISSN 0258-1221
  • Buy this book on publisher's site