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Subband Physics for Hg0.8 Cd0.2Te in the Electric Quantum Limit

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Optical Properties of Narrow-Gap Low-Dimensional Structures

Part of the book series: NATO ASI Series ((NSSB,volume 152))

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Abstract

We argue that essential aspects of the electron surface bands for narrow-gap semiconductors are best studied on p-type material in the electric quantum limit. For the case of a single occupied subband in strongly doped Hg0.8Cd0. 2Te we consider the surface level energies in the presence of strong tunneling overlap of the subband and valence band wave functions. We discuss the electric-field induced spin-splitting of the electron subbands.

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References

  1. Y. Takada, K. Arai, Y. Uemura, Physics of Narrow Gap Semiconductors, Lecture Notes in Physics Vol. 152, ed. E. Gornik et al., Berlin: Springer, p. 101, 1982.

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Author information

Authors and Affiliations

  1. Physik-Department, Technische Universität München, 8046, Garching, Fed. Rep. of Germany

    Frederick Koch

Authors
  1. Frederick Koch
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Editor information

Editors and Affiliations

  1. University of St. Andrews, St. Andrews, Scotland

    C. M. Sotomayor Torres

  2. CNRS-INSA, Toulouse, France

    J. C. Portal

  3. CNRS-SNCI, Grenoble, France

    J. C. Portal

  4. Max-Planck-Institut für Festkörperforschung, Grenoble, France

    J. C. Maan

  5. Imperial College of Science and Technology, London, England

    R. A. Stradling

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© 1987 Plenum Press, New York

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Koch, F. (1987). Subband Physics for Hg0.8 Cd0.2Te in the Electric Quantum Limit. In: Sotomayor Torres, C.M., Portal, J.C., Maan, J.C., Stradling, R.A. (eds) Optical Properties of Narrow-Gap Low-Dimensional Structures. NATO ASI Series, vol 152. Springer, Boston, MA. https://doi.org/10.1007/978-1-4613-1879-8_16

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  • DOI: https://doi.org/10.1007/978-1-4613-1879-8_16

  • Publisher Name: Springer, Boston, MA

  • Print ISBN: 978-1-4612-9047-6

  • Online ISBN: 978-1-4613-1879-8

  • eBook Packages: Springer Book Archive

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