Investigation of InxGa1−x N islands with electron microscopy

Pretorius, A; Yamaguchi, T; Schowalter, M; Kröger, R; Kübel, C; Hommel, D; Rosenauer, A

doi:10.1007/3-540-31915-8_3

A Pretorius⁴,
T Yamaguchi⁴,
M Schowalter⁴,
R Kröger⁴,
C Kübel³,
D Hommel⁴ &
…
A Rosenauer⁴

Part of the book series: Springer Proceedings in Physics ((SPPHY,volume 107))

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Abstract

In_xGa_1−xN islands grown by molecular beam epitaxy are analysed by transmission electron microscopy. Samples are compared which were of different nominal In concentrations and with or without GaN capping. The optimum imaging conditions for evaluation are described with special focus on polarity determination during analysis.

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Authors and Affiliations

Fraunhofer Institute for Manufacturing and Advanced Materials (IFAM), Bremen, Germany
C Kübel
Institute of Solid State Physics, University of Bremen, Bremen, Germany
A Pretorius, T Yamaguchi, M Schowalter, R Kröger, D Hommel & A Rosenauer

Authors

A Pretorius
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T Yamaguchi
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M Schowalter
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R Kröger
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C Kübel
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D Hommel
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A Rosenauer
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Editors and Affiliations

Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK
A. G. Cullis
Department of Materials, University of Oxford, Parks Road, Oxford, OX1 3PH, UK
J. L. Hutchison

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Pretorius, A. et al. (2005). Investigation of In_xGa_1−xN islands with electron microscopy. In: Cullis, A.G., Hutchison, J.L. (eds) Microscopy of Semiconducting Materials. Springer Proceedings in Physics, vol 107. Springer, Berlin, Heidelberg . https://doi.org/10.1007/3-540-31915-8_3

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DOI: https://doi.org/10.1007/3-540-31915-8_3
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-31914-6
Online ISBN: 978-3-540-31915-3
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)

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