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Microscopy of Semiconducting Materials

Proceedings of the 14th Conference, April 11–14, 2005, Oxford, UK

  • A. G. Cullis
  • J. L. Hutchison

Part of the Springer Proceedings in Physics book series (SPPHY, volume 107)

Table of contents

  1. Front Matter
    Pages I-XVI
  2. Epitaxy: Wide Band-Gap Nitrides

    1. Front Matter
      Pages 1-1
    2. B Daudin, J -L Rouvière, D Jalabert, J Coraux, V Favre-Nicolin, H Renevier et al.
      Pages 3-12
    3. N K van der Laak, R A Oliver, M J Kappers, C McAleese, C J Humphreys
      Pages 13-16
    4. A Pretorius, T Yamaguchi, M Schowalter, R Kröger, C Kübel, D Hommel et al.
      Pages 17-20
    5. Y B Kwon, J H Je, P Ruterana, G Nouet
      Pages 21-24
    6. J S Barnard, D M Graham, T M Smeeton, M J Kappers, P Dawson, M Godfrey et al.
      Pages 25-28
    7. Rachel A Oliver, Nicole K van der Laak, Menno J Kappers, Colin J Humphreys
      Pages 29-32
    8. M Hawkridge, D Cherns
      Pages 45-50
    9. P Vennéguès, J M Bethoux, Z Bougrioua, M Azize, P De Mierry, O Tottereau
      Pages 51-54
    10. P D Cherns, C McAleese, M J Kappers, C J Humphreys
      Pages 55-58
    11. R Datta, M J Kappers, J S Barnard, C J Humphreys
      Pages 59-62
    12. R T Murray, P J Parbrook, G Hill, I M Ross
      Pages 63-66
    13. P Singh, P Ruterana, G Nouet, A Jain, J M Redwing, M Wojdak
      Pages 67-70
    14. A Delimitis, Ph Komninou, Th Kehagias, Th Karakostas, E Dimakis, A Georgakilas et al.
      Pages 71-74
    15. J Deneen, S Kumar, C R Perrey, C B Carter
      Pages 83-86
  3. Epitaxy: Silicon-Germanium Alloys

    1. Front Matter
      Pages 87-87
    2. M Cabié, G Benassayag, A Rocher, A Ponchet, J M Hartmann, F Fournel
      Pages 93-96
    3. Norbert Hueging, Martina Luysberg, Knut Urban, Dan Buca, Bernd Hollaender, Siegfried Mantl et al.
      Pages 97-102
    4. N Zakharov, P Werner, G Gerth, L Schubert, L Sokolov, U Gösele
      Pages 103-106
    5. G A Maximov, D E Nikolitchev, D O Filatov
      Pages 107-110
    6. A C K Chang, D J Norris, I M Ross, A G Cullis, S H Olsen, A G O’Neill
      Pages 111-114
  4. Epitaxy: Growth and Defect Phenomena

    1. Front Matter
      Pages 115-115
    2. F M Morales, Ch Förster, O Ambacher, J Pezoldt
      Pages 131-134
    3. F M Morales, P Weih, Ch Wang, Th Stauden, O Ambacher, J Pezoldt
      Pages 135-138
    4. M Herrera, D González, J G Lozano, M Hopkinson, M Gutierrez, P Navaretti et al.
      Pages 139-142
    5. M W Fay, Y Han, S V Novikov, K W Edmonds, K Wang, B L Gallagher et al.
      Pages 143-146
    6. Y Han, M W Fay, P D Brown, S V Novikov, K W Edmonds, B L Gallagher et al.
      Pages 155-158
    7. B Pécz, Á Barna, V Heera, W Skorupa
      Pages 159-162
    8. R Beanland, A M Sánchez, A J Papworth, M H Gass, P J Goodhew
      Pages 163-166
    9. M Abouzaid, P Ruterana, G Nouet, C Liu, F Yun, B Xiao et al.
      Pages 171-174
  5. High Resolution Microscopy and Nanoanalysis

    1. Front Matter
      Pages 175-175
    2. C J D Hetherington, D J H Cockayne, R C Doole, J L Hutchison, A I Kirkland, J M Titchmarsh
      Pages 177-182
    3. P L Galindo, A Yáñez, J Pizarro, E Guerrero, T Ben, S I Molina
      Pages 191-194
    4. J Pizarro, E Guerrero, P Galindo, A Yañez, T Ben, S I Molina
      Pages 195-198
    5. R E Dunin-Borkowski, A C Twitchett, P A Midgley, M R McCartney, T Kasama, D Cooper et al.
      Pages 203-212
    6. P F Fazzini, P G Merli, G Pozzi, F Ubaldi
      Pages 217-220
    7. D Cooper, A C Twitchett, I Farrer, D A Ritchie, R E Dunin-Borkowski, P A Midgley
      Pages 221-224
    8. P K Somodi, R E Dunin-Borkowski, A C Twitchett, C H W Barnes, P A Midgley
      Pages 225-228

About these proceedings

Introduction

This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.

Keywords

electron microscope electron microscopy integrated circuit nanostructures plasma processing scanning probe microscopy semiconductor materials transmission electron microscopy

Editors and affiliations

  • A. G. Cullis
    • 1
  • J. L. Hutchison
    • 2
  1. 1.Department of Electronic and Electrical EngineeringUniversity of SheffieldSheffieldUK
  2. 2.Department of MaterialsUniversity of OxfordOxfordUK

Bibliographic information

  • DOI https://doi.org/10.1007/3-540-31915-8
  • Copyright Information Springer-Verlag Berlin Heidelberg 2005
  • Publisher Name Springer, Berlin, Heidelberg
  • eBook Packages Physics and Astronomy
  • Print ISBN 978-3-540-31914-6
  • Online ISBN 978-3-540-31915-3
  • Series Print ISSN 0930-8989
  • Buy this book on publisher's site