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ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS

  • Conference paper
Defects in High-k Gate Dielectric Stacks

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 220))

Abstract

A number of techniques are discussed with regard the measurement of electronically active defects in high-к gate dielectrics. Following a short review of 1st-order trapping kinetics, a discussion of its limitations, especially with respect to high-к gate dielectrics is included. It is suggested that, due to the nature of the proposed trap modulated transport in high-к gate dielectrics, the 1st-order trapping kinetics used historically for SiO2, may not be applicable without significant revision. However, the measurement techniques using the standard “stress and sense” methodology, where charge is injected into the film and the effects of the charge trapping are measured with either capacitancevoltage (ΔVFB) and/or current-voltage (ΔVt) to measure the effects of the charge trapping may still be applicable if reasonable assumptions may be made. A discussion of the positioning of trapped charge (i.e. bulk vs interface) is included. Data from HfO2 using electron injection via internal photo-emission and charge centroid extraction using the “photo I-V” technique suggest that centroid of the trapped charge is within the bulk of the high-к film independent of bias polarity and photon energy. Techniques involving transient current analysis using charge pumping in both “conventional base sweep” and “amplitude sweep” and pulsed IDS-VG are also presented. While these techniques are capable of measuring interfacial and near-interfacial trapped charge, their usefulness for obtaining a full understanding of spatial or energetic trap distributions is limited.

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Authors and Affiliations

  1. Electrical and Computer Engineering, University of Manitoba, Winnipeg, Manitoba, R3t 1S5, Canada

    D.A. BUCHANAN & D. FELNHOFER

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  1. D.A. BUCHANAN
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  1. IBM T.J.Watson Research Center, New York, NY, USA

    Evgeni Gusev

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BUCHANAN, D., FELNHOFER, D. (2006). ON THE CHARACTERIZATION OF ELECTRONICALLY ACTIVE DEFECTS IN HIGH-к GATE DIELECTRICS. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_4

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  • DOI: https://doi.org/10.1007/1-4020-4367-8_4

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