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Defects in High-k Gate Dielectric Stacks

Nano-Electronic Semiconductor Devices

  • Evgeni Gusev

Part of the NATO Science Series II: Mathematics, Physics and Chemistry book series (NAII, volume 220)

Table of contents

  1. Front Matter
    Pages I-XI
  2. MASAAKI NIWA, RIICHIROU MITSUHASHI, KAZUHIKO YAMAMOTO, SHIGENORI HAYASHI, AUDE ROTHCHILD, STEFAN KUBICEK et al.
    Pages 1-15
  3. JOHAN KLOOTWIJK, ANTON KEMMEREN, ROB WOLTERS, FRED ROOZEBOOM, JAN VERHOEVEN, ERIC VAN DEN HEUVEL
    Pages 17-28
  4. JEROME MITARD, CHARLES LEROUX, GILLES REIMBOLD, XAVIER GARROS, FRANÇOIS MARTIN, GERARD GHIBAUDO
    Pages 73-84
  5. LUIGI PANTISANO, L-Å. RAGNARSSON, M. HOUSSA, R. DEGRAEVE, G. GROESENEKEN, T. SCHRAM et al.
    Pages 97-108
  6. PAUL C. MCINTYRE, HYOUNGSUB KIM, KRISHNA C. SARASWAT
    Pages 109-121
  7. KAUPO KUKLI, SALVADOR DUEÑAS, HELENA CASTÁN, HECTOR GARCÍA, JUAN BARBOLLA, JAAN AARIK et al.
    Pages 123-134
  8. P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE, M.J. KIM, B.E. GNADE, R.M. WALLACE
    Pages 135-146
  9. ANDREI ZENKEVICH, YURI LEBEDINSKII, GIOVANNA SCAREL, MARCO FANCIULLI
    Pages 147-160
  10. BYOUNG HUN LEE, RINO CHOI, RUSTY HARRIS, S.A. KRISHAN, CHADWIN D. YOUNG, JOHNNY SIM et al.
    Pages 161-173
  11. J. ROBERTSON, K. XIONG, S.J. CLARK, S.J. CLARK
    Pages 175-187
  12. SOKRATES T. PANTELIDES, M.H. EVANS, D.M. FLEETWOOD, E. P. GUSEV, J. D. JOANNOPOULOS, Z. LU et al.
    Pages 189-202
  13. G. BERSUKER, B. H. LEE, H.R. HUFF, J. GAVARTIN, A. SHLUGER
    Pages 227-236
  14. MARCO FANCIULLI, OMAR COSTA, SILVIA BALDOVINO, SIMONE COCCO, GABRIELE SEGUINI, ENRICO PRATI et al.
    Pages 263-276
  15. KAROL FROHLICH, ROMAN LUPTÁK1, MILAN ŤAPAJNA, KRISTÍNA HUŠEKOVÁ, U. WEBER, P.K. BAUMANN et al.
    Pages 277-286
  16. SALVADOR DUEÑAS, HELENA CASTÁN, HÉCTOR GARCÍA, LUIS BAILÓN, KAUPO KUKLI, MIKKO RITALA et al.
    Pages 287-298
  17. J. A. FELIX, M. R. SHANEYFELT, J. R. SCHWANK, P. E. DODD, D. M. FLEETWOOD, X. J. ZHOU et al.
    Pages 299-321
  18. Y. LEBEDINSKII, A. ZENKEVICH, M. PUSHKIN, N. BARANTSEV, V. TROYAN, V. NEVOLIN
    Pages 323-330
  19. DENIS SHAMIRYAN, VASILE PARASCHIV, MARTINE CLAES, WERNER BOULLART
    Pages 331-338
  20. TORGNY GUSTAFSSON, ERIC GARFUNKEL, LYUDMILA GONCHAROVA, DMITRI STARODUB, ROBIN BARNES, MATEUS DALPONTE et al.
    Pages 349-360
  21. H. J. OSTEN, A. FISSEL, O. KIRFEL, Z. ELASSAR, E. BUGIEL, M. CZERNOHORSKY
    Pages 361-372
  22. T.M. HENDERSON, J.C. GREER, G. BERSUKER, A. KORKIN, R.J. BARTLETT
    Pages 373-383
  23. A. PASKALEVA, E. ATANASSOVA, M. LEMBERGER, A.J. BAUER
    Pages 411-422
  24. T.V. PEREVALOV, A.V. SHAPOSHNIKOV, K.A. NASYROV, D.V. GRITSENKO, V.A. GRITSENKO, V.M. TAPILIN
    Pages 423-434
  25. MONTSERRAT NAFRIA, XAVIER BLASCO, MARC PORTI, LIDIA AGUILERA, XAVIER AYMERICH
    Pages 435-446
  26. VLADIMIR OSIPOV, MARINA BAIDAKOVA, KAZUYUKI TAKAI, TOSHIAKI ENOKI, ALEXANDER VUL
    Pages 447-456
  27. A.H. EDWARDS, T. BUSANI, R.A.B. DEVINE, A. PINEDA
    Pages 457-470
  28. D.A. ANTONOV, D.O. FILATOV, A.V. KRUGLOV, G.A. MAXIMOV, A.V. ZENKEVICH, Y. LEBEDINSKII
    Pages 471-479
  29. Back Matter
    Pages 481-492

About these proceedings

Introduction

The goal of this NATO Advanced Research Workshop (ARW) entitled “Defects in Advanced High-k Dielectric Nano-electronic Semiconductor Devices”, which was held in St. Petersburg, Russia, from July 11 to 14, 2005, was to examine the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. The special feature of this workshop was focus on an important issue of defects in this novel class of materials. One of the key obstacles to high-k integration into Si nano-technology are the electronic defects in high-k materials. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. However, very little is known about the nature of the defects or about possible techniques to eliminate, or at least minimize them. Given the absence of a feasible alternative in the near future, well-focused scientific research and aggressive development programs on high-k gate dielectrics and related devices must continue for semiconductor electronics to remain a competitive income producing force in the global market.

Keywords

Diffusion Germanium IC MOSFET RAM SSI applied physics electrical engineering integrated circuit modeling semiconductor spectroscopy

Editors and affiliations

  • Evgeni Gusev
    • 1
  1. 1.IBM T.J.Watson Research CenterNew YorkU.S.A.

Bibliographic information

  • DOI https://doi.org/10.1007/1-4020-4367-8
  • Copyright Information Springer 2006
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-1-4020-4365-9
  • Online ISBN 978-1-4020-4367-3
  • Series Print ISSN 1568-2609
  • Buy this book on publisher's site