Abstract
The Si/dielectric interface properties influence the device performance significantly. Often the interface is not stable and changes during and after the growth. For a better understanding of the interface and layer formation processes, well-defined experimental studies were performed under ultra-clean ultra-high vacuum conditions. Molecular beam epitaxy in combination with real time reflection high-energy electron diffraction is here the most advantageous method because of its ability to monitor the formation of structures under ultra-high vacuum in situ within a wide range of different conditions. When combined with methods analyzing the bonding properties without leaving the vacuum, this approach results in a rather detailed insight into the interface formation and properties. Here, we will present results of the interface and film formation during epitaxial growth of Nd2O3 on silicon.
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OSTEN, H., FISSEL, A., KIRFEL, O., ELASSAR, Z., BUGIEL, E., CZERNOHORSKY, M. (2006). INTERFACE FORMATION DURING EPITAXIAL GROWTH OF BINARY METAL OXIDES ON SILICON. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_29
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DOI: https://doi.org/10.1007/1-4020-4367-8_29
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