Abstract
While investigating the surface composition of thin layers containing Hf with low energy ion spectroscopy (LEIS) utilizing He+ ions with energy E0=300รท800 eV, the fine structure of Hf line was observed. Hf spectrum consists of several narrow lines on top of a broad asymmetric peak. The number of lines and their separation does not depend on He+ incident energy, but rather on the chemical composition of the surface layer: spectrum of metallic Hf is remarkably different from that of HfO2, and, on the contrary, is very similar to HfSix. The observed effect is explained in terms of single electronic excitations due to promotion of Hf-He+ molecular orbitals during impact which leads to the inelastic energy loss of He+. Since LEIS is sensitive to the utmost surface layer, the observed effect can be potentially utilized to probe the surface electronic structure of compounds containing Hf.
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LEBEDINSKII, Y., ZENKEVICH, A., PUSHKIN, M., BARANTSEV, N., TROYAN, V., NEVOLIN, V. (2006). CAN LEIS SPECTRA CONTAIN INFORMATION ON SURFACE ELECTRONIC STRUCTURE OF HIGH-K DIELECTRICS?. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_25
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DOI: https://doi.org/10.1007/1-4020-4367-8_25
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