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INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS

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Defects in High-k Gate Dielectric Stacks

Part of the book series: NATO Science Series II: Mathematics, Physics and Chemistry ((NAII,volume 220))

Abstract

stability of various high-κ gate dielectric materials. The role of film morphology and the resultant interdiffusion are also discussed. This paper presents a summary of recent studies of the thermal

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References

  1. International Technology Roadmap for Semiconductors (2003); http://public.itrs.net/

    Google Scholar 

  2. M. L Green, E. P. Gusev, R. Degraeve, and E. L. Garfunkel, Ultrathin(<4 nm) SiO2 and Si-O-N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits, J. Appl. Phys. 90(5), 2057–2121 (2001).

    Article  Google Scholar 

  3. G. Wilk, R.M. Wallace, and J.M. Anthony, High-k gate dielectrics: Current status and materials properties considerations, J. Appl. Phys. 89(10), 5243–75 (2001).

    Article  Google Scholar 

  4. R.M. Wallace and G. Wilk, High-k dielectric materials for microelectronics, Crit. Rev. Sol. St. Mat. Sci. 28, 231 (2003).

    Google Scholar 

  5. R.M. Wallace and G. Wilk, High-k gate dielectric materials, MRS Bulletin 27(3), 192–7 (2002); and additional articles in that volume.

    Google Scholar 

  6. H. Bracht, Diffusion mechanisms and intrinsic point defect properties in silicon, MRS Bulletin 25(6), 22–7 (2000).

    Google Scholar 

  7. N.A. Stolwijk and H. Bracht, in Diffusion in Semiconductors and Non-Metallic Solids, Landolt-Börnstein New Series, Vol. III/33, Subvolume A: Diffusion in Semiconductors, edited by D.L. Beke (Springer-Verlag, Berlin, 1998), and references therein.

    Google Scholar 

  8. S. Guha, E.P. Gusev, H. Okorn-Schmidt, M.C. Copel, L.Å. Ragnarsson, N.A. Bojarczuk, and P. Ronsheim, High temperature stability of Al2O3 dielectrics on Si: Interfacial metal diffusion and mobility degradation Appl. Phys. Lett. 81(16), 2956–8 (2002).

    Article  Google Scholar 

  9. S.M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, New York, 1981).

    Google Scholar 

  10. G. D. Wilk and R. M. Wallace, Electrical properties of hafnium silicate gate dielectrics deposited directly on silicon, Appl. Phys. Lett. 74 (19), 2854–6 (1999).

    Article  Google Scholar 

  11. G. D. Wilk and R. M. Wallace, Stable zirconium silicate gate dielectrics deposited directly on silicon, Appl. Phys. Lett. 76 (1), 112–4 (1999).

    Google Scholar 

  12. G. D. Wilk, R. M. Wallace, and J. M. Anthony, Hafnium and zirconium silicates for advanced gate dielectrics, J. Appl. Phys. 87(1), 484–92 (2000).

    Article  Google Scholar 

  13. H. Lemke, Properties Of Silicon-Crystals Doped With Zirconium Or Hafnium, Phys. Stat. Sol. A 122(2), 617–630 (1990).

    Google Scholar 

  14. O.F. Vyvenko, R. Sachdeva, A.A. Istratov, R. Armitage, E.R. Weber, P.N.K. Deenapanray, C. Jagadish, Y. Gao, and H.R. Huff, Study of diffusivity and electrical properties of Zr and Hf in silicon, in Semiconductor Silicon (9th International Symposium), edited by H. R. Huff, L. Fabry, and S. Kishino, 201st Meeting of the Electrochemical Society, PV 2002-2, 440–51 (2002). <ISBN l-56677-374-l>

    Google Scholar 

  15. M. Quevedo-Lopez, M.El-Bouanani, S. Addepalli, J.L. Duggan, B.E. Gnade, R.M. Wallace, M.R. Visokay, M. Douglas, M.J. Bevan, and L. Colombo, Thermally induced Zr incorporation into Si from zirconium silicate thin films, Appl. Phys. Lett. 79(18), 2958–60 (2001).

    Article  Google Scholar 

  16. M. Quevedo-Lopez, M.El-Bouanani, S. Addepalli, J.L. Duggan, B.E. Gnade, R.M. Wallace, M.R. Visokay, M. Douglas, and L. Colombo, Hafnium interdiffusion studies from hafnium silicate into silicon, Appl. Phys. Lett. 79(25), 4192–4 (2001).

    Article  Google Scholar 

  17. M. Quevedo-Lopez, M.El-Bouanani, B.E. Gnade, R.M. Wallace, M.R. Visokay, M. Douglas, M.J. Bevan, and L. Colombo, Interdiffusion studies for HfSixOy and ZrSixOy on Si, J. Appl. Phys. 92(7), 3540–50 (2002).

    Article  Google Scholar 

  18. M.V. Fischetti, D.A. Nuemayer, and E.A. Cartier, Effective electron mobility in Si inversion layers in metal-oxide-semiconductor systems with a high-k insulator: The role of remote phonon scattering, J. Appl. Phys. 90(9), 4587–608 (2001).

    Article  Google Scholar 

  19. I. Polishchuk and C. Hu, Electron Wavefunction Penetration into Gate Dielectric and Interface Scattering — An Alternative to Surface Roughness Scattering Model, Symposium on VLSI Technology Digest of Technical Papers,(2001) pp. 51–2.

    Google Scholar 

  20. J. Koga, T. Ishihara, and S.Takagi, Effect of Gate Impurity Concentration on Inversion-Layer Mobility in MOSFETs with Ultrathin Gate Oxide Layer, IEEE Elec. Dev. Lett. 24(5), 354–6 (2003)

    Google Scholar 

  21. M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R.M. Wallace, Boron penetration studies from p+ polycrystalline Si through HfSixOy, Appl. Phys. Lett. 81(6), 1074 (2002).

    Article  Google Scholar 

  22. M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, M.R. Visokay, A. LiFatou, M.J. Bevan, L. Colombo, and R.M. Wallace, Phosphorus and arsenic penetration studies through HfSixOy and HfSixOyNz films, Appl. Phys. Lett. 81, 1609–11 (2002).

    Google Scholar 

  23. M. Quevedo-Lopez, M. El-Bouanani, M.J. Kim, B.E. Gnade, M.R. Visokay, A. LiFatou, JJ. Chambers, L. Colombo, and R.M. Wallace, Effect of N incorporation on boron penetration from polycrystalline-Si through HfSixOy films, Appl. Phys. Lett. 82(26), 4669–71 (2003).

    Article  Google Scholar 

  24. M.A. Quevedo-Lopez, M.R. Visokay, JJ. Chambers, M.J. Sevan, A. LiFatou, L. Colombo, M.J. Kim, B.E. Gnade, and R.M. Wallace, Dopant penetration studies through Hf silicate, J. Appl. Phys. 97, 043508 (2005).

    Article  Google Scholar 

  25. R. M. Wallace, R. A. Stolz, and G. D. Wilk, U.S. Patent Nos. 6,013,553 (2000); 6,020,243 (2000); 6,291,866 (2001); 6,291,867 (2001).

    Google Scholar 

  26. M. R. Visokay, J. J. Chambers, A. L. P. Rotondaro, A. Shanware, and L. Colombo, Appl. Phys. Lett. 80(17), 3183–5 (2002).

    Article  Google Scholar 

  27. M.-Y. Ho and H. Gong, G. D. Wilk, B. W. Busch, M. L. Green, W. H. Lin, A. See, S. K. Lahiri, M. E. Loomans, P.I. Räisänen, and T. Gustafsson, Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al2O3 using atomic layer deposition, Appl. Phys. Lett. 81(22), 4218–20 (2002).

    Article  Google Scholar 

  28. C. Wiemer, M. Fanciulli, B. Crivelli, G. Pavia, and M. Alessandri, Evolution of crystallographic ordering in Hfl-xAlxOy high-k dielectric deposited by atomic layer deposition Appl. Phys. Lett. 83(25), 5271–3 (2003).

    Article  Google Scholar 

  29. J.-P. Maria, D. Wicaksana, A. I. Kingon, B. Busch, H. Schulte, E. Garfunkel, and T. Gustafsson, High temperature stability in lanthanum and zirconia-based gate dielectrics, J. Appl. Phys. 90(7), 3476–82 (2001).

    Article  Google Scholar 

  30. D. H. Triyoso, R. I. Hegde, J. M. Grant, J. K. Schaeffer, D. Roan, B. E. White, Jr., and P. J. Tobin, Evaluation of lanthanum based gate dielectrics deposited by atomic layer deposition, J. Vac. Sci. Technol. B 23(1), 288–97 (2005).

    Google Scholar 

  31. X. Lu, Z. Liu, Yi. Wang, Y. Yang, X. Wang, H. Zhou, and B. Nguyen, Structure and dielectric properties of amorphous LaAlO3 and LaA1OxNy films as alternative gate dielectric materials, J. Appl. Phys. 94(2), 1229–34 (2003).

    Article  Google Scholar 

  32. W. Xiang, H. Lu, L. Yan, H. Guo, L. Liu, Y. Zhou, G Yang, J. Jiang H. Cheng, T. D. Lee, and Z. Chen, Characteristics of LaAlO3/Si(100) deposited under various oxygen pressures, J. Appl. Phys. 93(1), 533–6 (2003).

    Article  Google Scholar 

  33. R. A. B. Devine, Infrared and electrical properties of amorphous sputtered (LaxAll-x)2O3 films, J.Appl. Phys., 93(12) 9938–42.

    Google Scholar 

  34. L. F. Edge, D. G. Schlom, S. A. Chambers, E. Cicerrella, J. L. Freeouf, B. Holländer, and J. Schubert, Measurement of the band offsets between amorphous LaAlO3 and silicon, Appl. Phys. Lett. 84(5), 726–8 (2004).

    Article  Google Scholar 

  35. L. F. Edge, D. G. Schlom, R. T. Brewer, Y. J. Chabal, J. R. Williams, S. A. Chambers, C. Hinkle and G. Lucovsky, Y. Yang, S. Stemmer, M. Copel, B. Holländer, and J. Schubert, Suppression of subcutaneous oxidation during the deposition of amorphous lanthanum aluminate on silicon, Appl. Phys. Lett. 84(23), 4629–31 (2004).

    Article  Google Scholar 

  36. T. Busani and R.A.B. Devine, Substrate/oxide interface interaction in LaAlO3/Si structures, Mat. Res. Soc. Symp. Proc. Vol. 786, E6.12.1 (2004).

    Google Scholar 

  37. D. G. Schlom and J. H. Haeni, A Thermodynamic Approach to Selecting Alternative Gate Dielectrics, Mater. Res. Bull. 27(3), 198–204 (2002)

    Google Scholar 

  38. P. Sivasubramani, M. J. Kim, B. E. Gnade, R. M. Wallace, L. F. Edge, D. G. Schlom, H. S. Craft and J.-P. Maria, Outdiffusion of La and A1 from amorphous LaAlO3 in direct contact with Si (001), Appl. Phys. Lett. 86, 201901 (2005).

    Article  Google Scholar 

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Authors and Affiliations

  1. University of Texas at Dallas, Richardson, TX, 75083

    P. SIVASUBRAMIANI, M.A. QUEVEDO-LOPEZ, T.H. LEE, M.J. KIM, B.E. GNADE & R.M. WALLACE

Authors
  1. P. SIVASUBRAMIANI
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  2. M.A. QUEVEDO-LOPEZ
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  3. T.H. LEE
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  4. M.J. KIM
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  5. B.E. GNADE
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  6. R.M. WALLACE
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Editors and Affiliations

  1. IBM T.J.Watson Research Center, New York, NY, USA

    Evgeni Gusev

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SIVASUBRAMIANI, P., QUEVEDO-LOPEZ, M., LEE, T., KIM, M., GNADE, B., WALLACE, R. (2006). INTERDIFFUSION STUDIES OF HIGH-K GATE DIELECTRIC STACK CONSTITUENTS. In: Gusev, E. (eds) Defects in High-k Gate Dielectric Stacks. NATO Science Series II: Mathematics, Physics and Chemistry, vol 220. Springer, Dordrecht. https://doi.org/10.1007/1-4020-4367-8_11

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  • DOI: https://doi.org/10.1007/1-4020-4367-8_11

  • Publisher Name: Springer, Dordrecht

  • Print ISBN: 978-1-4020-4365-9

  • Online ISBN: 978-1-4020-4367-3

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