Abstract
An overview of the heat generation phenomena in SOI LDMOS transistors, mainly due to the Joule effect, is provided in this work. The distribution of the heat generation along the SOI LDMOS cross-section depends on the technological and geometrical parameters and the applied bias. Reported data and results extracted from simulation, theory and experiment are used to give physical insight into the heat generation mechanisms. The analysis of the heat generation is of utmost importance to derive the 3D dynamic temperature distribution at short time operation. An accurate temperature prediction at the source, drain and channel regions is desirable for improved electro-thermal models and for the study of the electromigration in interconnects. Moreover, information on temperature peaks is crucial to understand the failure mechanisms in power LDMOS transistors.
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Roig, J., Flores, D., Urresti, J., Hidalgo, S., Rebollo, J. (2005). Heat Generation Analysis in SOI LDMOS Power Transistors. In: Flandre, D., Nazarov, A.N., Hemment, P.L. (eds) Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment. NATO Science Series II: Mathematics, Physics and Chemistry, vol 185. Springer, Dordrecht. https://doi.org/10.1007/1-4020-3013-4_17
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DOI: https://doi.org/10.1007/1-4020-3013-4_17
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