Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment

Proceedings of the NATO Advanced Research Workshop on Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment Kiev, Ukraine 26–30 April 2004

  • Denis Flandre
  • Alexei N. Nazarov
  • Peter L.F. Hemment

Part of the NATO Science Series II: Mathematics, Physics and Chemistry book series (NAII, volume 185)

Table of contents

  1. Front Matter
    Pages i-xii
  2. Technology and Economics

    1. Colin Johnston, Alison Crossley
      Pages 1-10
    2. Jean-Pierre Colinge
      Pages 11-26
    3. M.Yu. Barabanenkov, V.V. Aristov, V.N. Mordkovich
      Pages 27-37
  3. SOI Material Technologies

    1. H. Moriceau, C. Lagahe-Blanchard, F. Fournel, S. Pocas, E. Jalaguier, P. Perreau et al.
      Pages 39-52
    2. V. Bondarenko, G. Troyanova, M. Balucani, A. Ferrari
      Pages 53-64
    3. Yukari Ishikawa, N. Shibata, S. Fukatsu
      Pages 65-75
    4. V. Ralchenko, T. Galkina, A. Klokov, A. Sharkov, S. Chernook, V. Martovitsky
      Pages 77-84
    5. Giorgi Natsvlishvili, Tamaz Butkhuzi, Maia Sharvashidze, Lia Trapaidze, Dimitri Peikrishvili
      Pages 85-90
    6. A. Misiuk, J. Ratajczak, J. Kątcki, I.V. Antonova
      Pages 91-96
    7. O. Martinyuk, D. Mazunov, V. Melnik, Ya. Olikh, V. Popov, B. Romanyuk et al.
      Pages 97-102
    8. M. F. Bain, P. Baine, D. W. McNeill, G. Srinivasan, N. Jankovic, J. McCartney et al.
      Pages 103-108
  4. Reliability and Operation of SOI Devices in Harsh Environment

    1. Jalal Jomaah, Francis Balestra
      Pages 109-120
    2. V. Nakov, D. Nuernbergk, S.G.M. Richter, S. Bormann, V. Schulze, S.B. Richter
      Pages 145-154
    3. J. Roig, D. Flores, J. Urresti, S. Hidalgo, J. Rebollo
      Pages 167-178
    4. V. Kilchytska, L. Vancaillie, K. de Meyer, D. Flandre
      Pages 185-190

About these proceedings

Introduction

This proceedings volume archives the contributions of the speakers who attended the NATO Advanced Research Workshop on “Science and Technology of Semiconductor-On-Insulator Structures and Devices Operating in a Harsh Environment” held at the Sanatorium Puscha Ozerna, th th Kyiv, Ukraine, from 25 to 29 April 2004. The semiconductor industry has maintained a very rapid growth during the last three decades through impressive technological achievements which have resulted in products with higher performance and lower cost per function. After many years of development semiconductor-on-insulator materials have entered volume production and will increasingly be used by the manufacturing industry. The wider use of semiconductor (especially silicon) on insulator materials will not only enable the benefits of these materials to be further demonstrated but, also, will drive down the cost of substrates which, in turn, will stimulate the development of other novel devices and applications. In itself this trend will encourage the promotion of the skills and ideas generated by researchers in the Former Soviet Union and Eastern Europe and their incorporation in future collaborations.

Keywords

CMOS Double-diffused metal-oxide-semiconductor transistor EEPROM EPROM PROM ROM Semiconductor Transistor electronics field-effect transistor heterojunction bipolar transistor integrated circuit metal oxide semiconductur field-effect transistor static-induction transistor

Editors and affiliations

  • Denis Flandre
    • 1
  • Alexei N. Nazarov
    • 2
  • Peter L.F. Hemment
    • 3
  1. 1.Microelectronics LaboratoryUniversité Catholique de LouvainLouvain-la-NeuveBelgium
  2. 2.Institute of Semiconductor PhysicsNational Academy of Science of UkraineKyivUkraine
  3. 3.School of Electronics and Physical SciencesUniversity of SurreyGuildfordUK

Bibliographic information

  • DOI https://doi.org/10.1007/1-4020-3013-4
  • Copyright Information Kluwer Academic Publishers 2005
  • Publisher Name Springer, Dordrecht
  • eBook Packages Engineering
  • Print ISBN 978-1-4020-3011-6
  • Online ISBN 978-1-4020-3013-0
  • Series Print ISSN 1568-2609
  • About this book