Effect of Metallic Strip Deposition Within the Source Dielectric with Applied Double Metallic Drain for Enhanced DC/RF Behavior of Charge Plasma TFET for Low-Power IOT Applications
- 212 Downloads
Wide tunneling barrier is always a hurdle to achieve acceptable electrical behavior for charge plasma TFET. Poor tunneling rate of charge carriers results in the degraded switching speed of the charge plasma TFET for low-power analog applications. In this concern, deposition of a thin metallic strip within the dielectric at channel/source junction enhances the DC characteristics like threshold voltage, subthreshold swing, and ON current of the device. Simultaneously, double metallic drain technique employed at drain side reduces ambipolar (negative conduction) nature of device. This article consists of a comparative analysis of conventional charge plasma TFET with modified structure. Inverter implementation of conventional and modified structures is also performed for the adaptability of devices for low-power IoT applications.
KeywordsBTBT Metallic strip Work function
- 8.Soni, D., Sharma, D., Aslam, M., Yadav, S.: A novel approach for the improvement of electrostatic behaviour of physically doped TFET by using plasma formation and shortening of gate electrode with hetero gate dielectric. Appl. Phys. A 124, 306 (2018)Google Scholar
- 9.Yadav, S., Sharma, D., Soni, D., Aslam, M.: Controlling ambipolarity with improved RF performance by drain/gate work function engineering and using high k dielectric material in electrically doped TFET: proposal and optimization. J. Comput. Electron. 16, 721–731 (2017)Google Scholar
- 17.ATLAS Device Simulation Software: Silvaco Int. Santa Clara, CA, USA (2014)Google Scholar