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A high performance gate engineered charge plasma based tunnel field effect transistor

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Abstract

In this paper, we propose a new gate engineered dopingless tunnel field effect transistor (GEDL-TFET). GEDL-TFET has double gate and uses metals of different work functions to realize source and drain regions in undoped silicon; a charge plasma concept. The novelty of the device is the use of dual material top gate and thus two gates appear at the top, main gate 1 and a tunneling gate (TG). The use of TG has enhanced the performance of the device significantly and it acts as a performance booster. The simulation study has shown that the \(\hbox {I}_{\mathrm{ON}}\) and \(\hbox {I}_{\mathrm{ON}}/\hbox {I}_{\mathrm{OFF}}\) ratio in the proposed GEDL-TFET device have increased by \(\sim \)53 times and \(\sim \)68 times in comparison to a double gate doped TFET (D-TFET) and a double gate dopingless TFET (DL-TFET) devices respectively. Further, a significant improvement in average subthreshold slope of \(\sim \)57% has been achieved in the proposed GEDL-TFET device in comparison to the other two devices. Besides, the cutoff frequency \((f_{\mathrm{T}})\) of GEDL-TFET (90.77 GHZ) has increased by \(\sim \)12 times in comparison to D-FET (\(\sim \)7.77 GHZ) and DL-TFET (\(\sim \)7.77 GHZ) devices respectively. The transient analyses have shown that a reduction of 47 and 44.11 % in switching ON-delay and 21.1 and 16.23 % in switching OFF delay is obtained in the GEDL-TFET device based inverting amplifier in comparison to DL-TFET and D-TFET based inverters amplifiers respectively.

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Acknowledgments

This work was supported by NSTIP strategic technologies programs, number (11_NAN-2118-02) in the Kingdom of Saudi Arabia”.

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Authors and Affiliations

  1. Department of Electronics and Communication Engineering, Jamia Millia Islamia, New Delhi, India

    Sajad A. Loan

  2. Department of Applied Sciences, Jamia Millia Islamia, New Delhi, India

    Faisal Bashir & M. Rafat

  3. Department of Electrical Engineering, King Saud University, Riyadh, Saudi Arabia

    Abdul Rehman M. Alamoud & Shuja A. Abbasi

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  1. Faisal Bashir
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  2. Sajad A. Loan
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  3. M. Rafat
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  4. Abdul Rehman M. Alamoud
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  5. Shuja A. Abbasi
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Correspondence to Sajad A. Loan.

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Bashir, F., Loan, S.A., Rafat, M. et al. A high performance gate engineered charge plasma based tunnel field effect transistor. J Comput Electron 14, 477–485 (2015). https://doi.org/10.1007/s10825-015-0665-5

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