Abstract
A key issue in the elaboration of nanodots deposited on substrates is to be able to control their size, density and organisation. In that perspective, major attention has been given to monitor the substrate strain which may be helpful in some case to induce organization. In that context, we studied a currently used substrate: a Si wafer covered by an oxide layer. The typical thickness for such oxide layer is usually in the nanometer range : namely 1 to 10 nm.
This is a preview of subscription content, log in via an institution to check access.
Access this chapter
Tax calculation will be finalised at checkout
Purchases are for personal use only
References
M. J. Hytch, E. Snoeck, R. Kilaas, Ultramicroscopy 74, (1998) p. 131
P. Mur, M.-N. Semeria, M. Olivier, A.M. Papon, Ch. Leroux, G. Reimbold, P. Gentile, N. Magnea, T. Baron, R. Clerc, G Ghibaudo, Applied Surface Science 175–176 (2001) p. 726
M. Castro-Colin, W. Donner, S. C. Moss, Z. Islam, S. K. Sinha, R. Nemanich, H. T. Metzger, P. Bösecke and T. Shülli, Phys. Rev. B 71, (2005) p. 045310.
We kindly acknowledge the ESRF for allocating beamtime and the ESRF ID1 staff for their help during x-ray experiments.
Author information
Authors and Affiliations
Editor information
Editors and Affiliations
Rights and permissions
Copyright information
© 2008 Springer-Verlag Berlin Heidelberg
About this paper
Cite this paper
Donnadieu, P., Chamard, V., Maret, M., Simon, J.P., Mur, P. (2008). Influence of the oxide thickness on the SiO2/Si interface structure. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_6
Download citation
DOI: https://doi.org/10.1007/978-3-540-85226-1_6
Publisher Name: Springer, Berlin, Heidelberg
Print ISBN: 978-3-540-85225-4
Online ISBN: 978-3-540-85226-1
eBook Packages: Physics and AstronomyPhysics and Astronomy (R0)