Abstract
We have used a combination of high resolution electron microscopy (HREM), three dimensional atom probe (3DAP) microscopy and atomic force microscopy (AFM) to reveal the atomic structure of InGaN quantum wells (QWs) and InGaN interfaces. Such quantum wells and interfaces are of considerable scientific and technological importance because they form the basis of GaN-based LEDs and lasers.
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Humphreys, C.J. et al. (2008). The atomic structure of GaN-based quantum wells and interfaces. In: Richter, S., Schwedt, A. (eds) EMC 2008 14th European Microscopy Congress 1–5 September 2008, Aachen, Germany. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-540-85226-1_21
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DOI: https://doi.org/10.1007/978-3-540-85226-1_21
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