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Spectroscopy of inversion electrons on III–V semiconductors

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Festkörperprobleme 27

Part of the book series: Advances in Solid State Physics ((ASSP,volume 27))

Abstract

The quasi two-dimensional electron gases realized in inversion layers of selectively doped GaAs/Ga1−xAlxAs heterojunctions and of metal-oxide-semiconductor structures on InSb are studied by far-infrared spectroscopy. Specifically, effects arising from the nonparabolic band structure of these semiconductors in the presence of the surface electric field and external magnetic fields are discussed. Taking advantage of the distinct band parameters of the two compounds GaAs and InSb, a fairly comprehensive picture of the motion of electrons in quasi two-dimensional electron systems on III–V semiconductors is obtained.

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  1. Institut für Angewandte Physik, Universität Hamburg, D-2000, Hamburg 36, Federal Republic of Germany

    Ulrich Merkt

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  1. Ulrich Merkt
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P. Grosse

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© 1987 Friedr. Vieweg & Sohn Verlagsgesellschaft mbH

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Merkt, U. (1987). Spectroscopy of inversion electrons on III–V semiconductors. In: Grosse, P. (eds) Festkörperprobleme 27. Advances in Solid State Physics, vol 27. Springer, Berlin, Heidelberg. https://doi.org/10.1007/BFb0107918

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  • DOI: https://doi.org/10.1007/BFb0107918

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  • Print ISBN: 978-3-528-08033-4

  • Online ISBN: 978-3-540-75356-8

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