Abstract
In electron inversion layers of metal-oxide-semiconductor structures on InSb cyclotron resonance in crossed electric and magnetic fields ExB is studied. The crossed-field configuration is established by the surface electric field of the space-charge potential and by a magnetic field that is applied parallel to the layers. Destruction of the Landau quantization is observed when the ratio E/B exceeds a critical value.
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© 1987 Springer-Verlag Berlin Heidelberg
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Merkt, U. (1987). Cyclotron Resonance in InSb in Crossed Electric and Magnetic Fields. In: Landwehr, G. (eds) High Magnetic Fields in Semiconductor Physics. Springer Series in Solid-State Sciences, vol 71. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-83114-0_37
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DOI: https://doi.org/10.1007/978-3-642-83114-0_37
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