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Large Magnetoconductance in GaAs Induced by Impact Ionization

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Abstract

We have investigated this magneto-switching behavior in GaAs structure. Exposing these devices to a small magnetic field (< 0.5 Tesla) induced a change in conductance that was above 100,000% at 10 K and up to 1,000% at 300 K. We also observed a variety of transport mechanisms in a single device that were clearly distinguished according to the bias voltage and their characteristic magnetoconductance can be specified. This work represents important progress in understanding the physics of the magneto-switching function and achieving large ON/OFF ratios.

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Acknowledgments

This research was supported by “Enhancement of Measurement and Standards Technologies in Physical SI Units” funded by the Korea Research Institute of Standards and Science (KRISS-2019-GP2019-0001) and Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2017R1D1A1A02018517).

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Authors and Affiliations

  1. Center for Spintronics, Korea Institute of Science and Technology, Seoul, 13679, Korea

    Taeyueb Kim

  2. Center for Electromagnetic Metrology, Korea Research Institute of Standards and Science, Daejeon, 34113, Korea

    Sungjung Joo

  3. Center for Spintronics, Korea Institute of Science and Technology, Seoul, 02792, Korea

    Hyun Cheol Koo

  4. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Korea

    Hyun Cheol Koo

  5. Department of Display and Semiconductor Physics, Korea University, Sejong, 02841, Korea

    Jinki Hong

Authors
  1. Taeyueb Kim
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  2. Sungjung Joo
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  3. Hyun Cheol Koo
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  4. Jinki Hong
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Correspondence to Sungjung Joo.

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Kim, T., Joo, S., Koo, H.C. et al. Large Magnetoconductance in GaAs Induced by Impact Ionization. J. Korean Phys. Soc. 75, 1017–1020 (2019). https://doi.org/10.3938/jkps.75.1017

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  • DOI: https://doi.org/10.3938/jkps.75.1017

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