Abstract
The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10−3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.
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Jeong, S., Lee, SN. & Kim, H. Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method. Journal of the Korean Physical Society 72, 90–94 (2018). https://doi.org/10.3938/jkps.72.90
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DOI: https://doi.org/10.3938/jkps.72.90