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Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer

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Abstract

The influence of different AlGaN Impurity Blocking Layer (IBL) thickness in the GaN/Si (111) structure with GaN/AlN SLs buffer on the material and electrical properties of GaN/Si (111) system was studied in detail. It is found that the insertion of AlGaN IBL can increase the (102) FWHM and decrease the (002) FWHM. Meanwhile, AlGaN IBL with an optimized thickness can further improve the surface roughness and strain-state of GaN-Si (111) system. By using Secondary Ion Mass Spectroscopy, it is found that AlGaN IBL have a strong effect in blocking the Si donor impurities originating from the Si substrate during the high temperature growth, which can decrease the leakage current while the breakdown voltage can be dramatically increased.

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Acknowledgments

The work was partially supported by the National Natural Science Foundation of China (Grant Nos. 51177175, 61274039 and 61574173), the National High-tech R&D Program of China (Grant No. 2014AA032606), the Science & Technology Plan of Guangdong Province, China (Grant Nos. 2015A030312011, 2013B051000041, 2014B050505009, 2015B090903062), the Science & Technology Plan of Guangzhou, China (Grant No. 201508010048), and the Opened Fund of The State Key Laboratory on Integrated Optoelectronics (Grant No. IOSKL2014KF17).

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Authors and Affiliations

  1. School of Electronics and Information Technology,Sun Yat-sen University, Xin-Gang-Xi Rd. 135, Guangzhou, 510275, People’s Republic of China

    Yiqiang Ni, Liang He, Deqiu Zhou, Zhiyuan He, Zijun Chen, Yue Zheng, Fan Yang, Zhen Shen, Xiaorong Zhang, Lei He, Zhisheng Wu, Baijun Zhang & Yang Liu

  2. Institute of Power Electronics and Control Technology,Sun Yat-sen University, Xin-Gang-Xi Rd.135, Guangzhou, 510275, People’s Republic of China

    Yang Liu

  3. State Key Laboratory of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Xin-Gang-Xi Rd. 135, Guangzhou, 510275, People’s Republic of China

    Zhisheng Wu, Baijun Zhang & Yang Liu

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  1. Yiqiang Ni
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  2. Liang He
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  3. Deqiu Zhou
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Correspondence to Baijun Zhang or Yang Liu.

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Ni, Y., He, L., Zhou, D. et al. Low-leakage current and high-breakdown voltage GaN-on-Si (111) System with an AlGaN impurity blocking layer. J Mater Sci: Mater Electron 27, 5158–5163 (2016). https://doi.org/10.1007/s10854-016-4408-6

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  • DOI: https://doi.org/10.1007/s10854-016-4408-6

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