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Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method

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Abstract

The electrical breakdown (EBD) method was used to obtain Ohmic contact to semipolar (11-20) p-GaN surfaces using the Ti/SiO2/p-GaN structure. The EBD method by which the electrical stress voltage was increased up to 70 V with a compliance current of 30 mA resulted in an Ohmic contact with a specific contact resistance of 3.1×10−3 Ωcm2. The transmission electron microscope (TEM) analysis revealed that the oxygen was slightly out-diffused from SiO2 layer toward Ti surface and the oxidation occurred at the Ti surface, while the GaN remained unchanged.

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Authors and Affiliations

  1. School of Semiconductor and Chemical Engineering, Chonbuk National University, Jeonju, 54896, Korea

    Seonghoon Jeong

  2. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, 15073, Korea

    Sung-Nam Lee

  3. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, 54896, Korea

    Hyunsoo Kim

Authors
  1. Seonghoon Jeong
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  2. Sung-Nam Lee
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  3. Hyunsoo Kim
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Correspondence to Hyunsoo Kim.

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Jeong, S., Lee, SN. & Kim, H. Formation of Ohmic contact to semipolar (11-22) p-GaN by electrical breakdown method. Journal of the Korean Physical Society 72, 90–94 (2018). https://doi.org/10.3938/jkps.72.90

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  • DOI: https://doi.org/10.3938/jkps.72.90

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