Abstract
In this study, we fabricated high-quality ZnO films using hydrothermally grown ZnO nanorods and a spin-coated Al-doped ZnO film by using regrowth method. The phtoluminescence (PL) intensity ratios of the near-band-edge (NBE) to deep-level (DL) emission peaks (I NBE /I DL ) for ZnO nanorods (samples 1) and ZnO film (sample 2) were 2.13 and 24.3, respectively. The redshift from 3.288 (sample 2) to 3.278 eV (sample 1) and low I NBE /I DL ratio in PL spectra were attributed to large mismatch between ZnO and Si substrate, resulting in a residual stress and the low optical properties. In case of sample 2, the photocurrent was sharply increased without the exponential rise because of enhanced optical properties of ZnO film by regrowth. The regrowth method is expected to represent a possible route for fast-response ultraviolet sensors.
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S. B. Bashar, M. Suja, M. Morshed, F. Gao and J. Liu, Nanotechnology 27, 065204 (2016).
Y. Tchoe, C-H. Lee, J. B. Park, H. Baek, K. Chung, J. Jo, M. Kim and G-C. Yi, ACS Nano 10, 3114 (2016).
M. Thepnurat, T. Chairuangsri, N. Hongsith, P. Ruankham and S. Choopun, ACS Appl. Mater. Interfaces 7, 24177 (2015).
S. Kim, G. Nam, H. Yoon, H. Park, H. Choi, J. S. Kim, J. S. Kim, D. Y. Kim, S-O Kim and J-Y. Leem, Electron. Mater. Lett. 10, 869 (2014).
S. K. Shaikh, S. I. Inamdar, V. V. Ganbavle and K. Y. Rajpure, J. Alloy. Compd. 664, 242 (2016).
Y. Kim, J. Choe, G. Nam, I. Kim, S-H. Lee, S. Kim, D. Y. Kim, S-O Kim and J-Y. Leem, J. Korean Phys. Soc. 66, 224 (2015).
K. H. Kim and E. Arifin, Met. Mater. Int. 13, 489 (2007).
M. Thambidrai, J. Y. Kim, C-M. Kang, N. Muthukumarasamy, H-J. Song, J. Song, Y. Ko, D. Velauthapillai and C. Lee, Renew. Energy 66, 433 (2014).
D. Garcia-Alonso, S. E. Potts, C. A. A. van Helvoirt, M. A. Verheijen and W. M. M. Kessels, J. Mater. Chem. C 3, 3095 (2015).
D-T. Phan and G-S. Chung, Curr. Appl. Phys. 12, 521 (2012).
A. Osipov, S. A. Kukushkin, N. A. Feoktistov, A. Osipova, N. Venugopal, G. D. Verma, B. K. Gupta and A. Mita, Thin Solid Films 520, 6836 (2012).
B. H. Lin, W. R. Liu, S. Yang, C. C. Kuo, C-H. Hsu, W. F. Hsieh, W. C. Lee, Y. J. Lee, M. Hong and J. Kwo, Cryst. Growth Des. 11, 2846 (2011).
T. I. Wong, H. R. Tan, D. Sentosa, L. M. Wong, S. J. Wang and Y. P. Feng, J. Phys. D: Appl. Phys. 45, 415306 (2012).
W. Wang, C. Chen, G. Zhang, T. Wang, H. Wu, Y. Liu and C. Liu, Nanoscale Res. Lett. 10, 91 (2015).
S. K. Panda and C. Jacob, Solid State Electron. 73, 44 (2012).
Z. Wang, X. Zhan, Y. Wang, S. Muhammad, Y. Huang and J. He, Nanoscale 4, 2678 (2012).
T. P. Chen, S. J. Young, S. J. Chang, C. H. Hsiao and C. S. Huang, J. Electrochem. Soc. 159, J153 (2012).
I-C. Yao, T-Y. Tseng and P. Lin, Sensor. Actuat. APhys. 178, 26 (2012).
H-F. Pang, Y-Q. Fu, Z-J. Li, Y. Li, J-Y. Ma, F. Placido, A. J. Walton and X-T. Zu, Sensor. Actuat. A-Phys. 193, 87 (2013).
A. Rajan, H. K. Yadav, V. Gupta and M. Tomar, J. Mater. Sci. 48, 7994 (2013).
B. Saravanakumar, R. Mohan, K. Thiyagarajan and S-J. Kim, J. Alloy. Compd. 580, 538 (2013).
F. Yi, Q. Liao, X. Yan, Z. Bai, Z. Wang, X. Chen, Q. Zhang, Y. Huang and Y. Zhang, Physica E 61, 180 (2014).
P. S. Shewale, N. K. Lee, S. H. Lee, K. Y. Kang and Y. S. Yu, J. Alloy. Compd. 624, 251 (2015).
Y. Luo, B. Yin, H. Zhang, Y. Qiu, J. Lei, Y. Chang, Y. Zhao, J. Ji and L. Hu, Appl. Surf. Sci. 361, 157 (2016).
G. Nam, B. Kim, Y. Park, S. Park, J. Moon, D. Y. Kim, S-O. Kim and J-Y. Leem, J. Mater. Chem. C 2, 9918 (2014).
H. Kanber, R. J. Cipolli, W. B. Henderson and J. M. Whelan, J. Appl. Phys. 57, 4732 (1985).
Y. G.Wang, S. P. Lau, X. H. Zhang, H. H. Hng, H. W. Lee, S. F. Yu and B. K. Tay, J. Cryst. Growth 259, 335 (2003).
C. Park, J. Lee and W. S. Chang, J. Phys. Chem. C 119, 169894 (2015).
Y. M. Lu, X. P. Li, S. C. Su, P. J. Cao, F. Jia, S. Han, Y. X. Zeng, W. J. Liu and D. L. Zhu, J. Lumin. 152, 254 (2014).
L. M. Kukreja, P. Misra, J. Fallert, D. M. Phase and H. Kalt, J. Appl. Phys. 112, 013525 (2012).
T. Monteiro, C. Boemare, E. Rita, E. Alves and M. J. Soares, J. Appl. Phys. 93, 8995 (2003).
V. Khranovskyy, I. Shtepliuk, I. G. Ivanov, I. Tsiaoussis and R. Yakimova, Carbon 99, 295 (2016).
A. K. Das, P. Misra, R. Kumar, T. Ganguli, M. K. Slingh, D. M. Phase and L. M. Kukreja, Appl. Phys. A 114, 1119 (2014).
J. H. Noh, I-S. Cho, S. Lee, C. M. Cho, H. S. Han, J-S. An, C. H. Kwak, J. Y. Kim, H. S. Jung, J-K. Lee and K. S. Hong, Phys. Status Solidi A 206, 2133 (2009).
H-M. Chiu, Y-T. Chang, W-W. Wu and J-M. Wu, ACS Appl. Mater. Interfaces 6, 5183 (2014).
M. S. Kim, G. Nam, D. Kim, H. E. Kim, H. Kang, W. B. Lee, H. Choi, Y. Kim and J-Y. Leem, Korean J. Met. Mater. 53, 139 (2015).
V. A. Fonoberov, K. A. Alim and A. A. Balandin, Phys. Rev. B 73, 165317 (2006).
A. Zawadzka, P. Płóociennik, Y. E. Kouari, H. Bongharraf and B. Sahraoui, J. Lumin. 169, 483 (2016).
O. F. Farhat, M. M. Halim, M. J. Abdullah, M. K. M. Ali, N. M. Ahmed and N. K. Allam, Appl. Phys. A. 119, 1197 (2015).
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Nam, G., Kim, S., Jo, E. et al. A regrowth method for the fabrication of high-quality ZnO films and their application in fast-response UV sensors. Journal of the Korean Physical Society 71, 47–53 (2017). https://doi.org/10.3938/jkps.71.47
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DOI: https://doi.org/10.3938/jkps.71.47