Abstract
We fabricated Cu2ZnSn(S,Se)4 (CZTSSe) thin films by sulfurization of co-evaporated Cu-Zn-Sn-Se precursor layers under a mixed atmosphere of Ar and H2S. The concentration of H2S in the sulfurization chamber was adjusted to control the replacement of Se by S in CZTSSe thin films. The effect of applying different sulfurization atmospheres was analyzed using X-ray diffraction (XRD), Raman scattering, and secondary electron imaging. XRD patterns and Raman spectra confirmed the formation of polycrystalline CZTSSe thin films. The anion compositions of CZTSSe samples, which depended on the concentration of H2S, were estimated by using the peak heights of A modes in Raman spectra. To further analyze Raman scattering of CZTSSe thin film, we used a diamond anvil cell to apply a high pressure environment of up to 5.13 GPa on the CZTSSe sample. The effect of H2S concentration on the crystallinity of the CZTSSe thin films is also discussed.
Similar content being viewed by others
References
W. Shockley and H. J. Queisser, J. Appl. Phys. 32, 510 (1961).
M. Grossberg, J. Krustok, J. Raudoja, K. Timmo, M. Altosaar and T. Raadik, Thin Solid Films 519, 7403 (2011).
J. He, L. Sun, S. Chen, Y. Chen, P. Yang and J. Chu, J. Alloy Compd. 511, 129 (2012).
W. Wang, M. T. Winkler, O. Gunawan, T. Gokmen, T. K. Todorov, Y. Zhu and D. B. Mitzi, Adv. Ener. Mater. 4, 1 (2014).
S. W. Shin, I. Y. Kim, K. V. Gurav, C. H. Jeong, J. H. Yun, P. S. Patil, J. Y. Lee and J. H. Kim, Curr. Appl. Phys. 13, 1837 (2013).
J. He, L. Sun, N. Ding, H. Kong, S. Zuo, S. Chen, Y. Chen, P. Yang and J. Chu, J. Alloys Comp. 529, 34 (2012).
O. P. Singh, N. Vijayan, K. N. Sood, B. P. Singh and V. N. Singh, J. Alloys Comp. 648, 595 (2015).
D. Nam, J. Kim, J. U. Lee, A. Nagaoka, K. Yoshino, W. Cha, H. Kim, I. C. Hwang, K. B. Yoon and H. Cheong, Appl. Phys. Lett. 105, 173903 (2014).
R. Djemour, A. Redinger, M. Mousel, L. Gutay, X. Fontane, V. Izquierdo-Roca, A. Perez-Rodriguez and S. Siebentritt, Opt. Express 21, A695 (2013).
M. Guc, S. Levcenko, I. V. Bodnar, V. Izquierdo-Roca, X. Fontane, L. V. Volkova, E. Arushanov and A. Perez-Rodrguez, Sci. Rep. 6, 19414 (2016).
Y. Kim and I. H. Choi, Phys. Status Solidi B 253, 1861 (2016).
Y. Kim and I. H. Choi, Curr. Appl. Phys. 16, 944 (2016).
International Centre for Diffraction Data (ICDD) number 26-0575 (tetragonal-Cu2ZnSnS4), 05-0566 (cubic-ZnS), 52-0868 (tetragonal-Cu2ZnSnSe4), 88-2345 (cubic-ZnSe), 89-5156 (cubic-Mo).
A. Khare, B. Himmetoglu, M. Johnson, D. J. Norris, M. Cococcioni, and E. S. Aydil, J. Appl. Phys. 111, 083707 (2012).
N. B. M. Amiri and A. Postnikov, Phys. Rev. B 82, 205204 (2010).
T. Gurel, C. Sevik and T. Cagin, Phys. Rev. B 84, 205201 (2011).
D. B. Mitzi, O. Gunawan, T. K. Todorov, K. Wang and S. Guha, Sol. Ener. Mater. Sol. Cells 95, 1421 (2011).
T. Gurel, C. Sevik and T. Cagin, Phys. Rev. B 84, 205201 (2011).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, Y., Choi, IH. Preparation and characterization of Cu2ZnSn(S,Se)4 thin films by sulfurization of Cu-Zn-Sn-Se precursor layers. Journal of the Korean Physical Society 70, 281–285 (2017). https://doi.org/10.3938/jkps.70.281
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.70.281