Abstract
This paper presents a novel input-parasitic compensation (IPC) technique for a nanopore-based complementary metal-oxide-semiconductor (CMOS) DNA detection sensor. A resistive-feedback transimpedance amplifier is typically adopted as the headstage of a DNA detection sensor to amplify the minute ionic currents generated from a nanopore and convert them to a readable voltage range for digitization. But, parasitic capacitances arising from the headstage input and the nanopore often cause headstage saturation during nanopore sensing, thereby resulting in significant DNA data loss. To compensate for the unwanted saturation, in this work, we propose an area-efficient and automated IPC technique, customized for a low-noise DNA detection sensor, fabricated using a 0.35-μm CMOS process; we demonstrated this prototype in a benchtop test using an α-hemolysin (α-HL) protein nanopore.
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Kim, J. A novel input-parasitic compensation technique for a nanopore-based CMOS DNA detection sensor. Journal of the Korean Physical Society 69, 1705–1710 (2016). https://doi.org/10.3938/jkps.69.1705
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DOI: https://doi.org/10.3938/jkps.69.1705
Keywords
- Biophysics
- Nanopore device
- Single-molecule analysis
- DNA detection sensor
- Dead-time compensation
- α-hemolysin pore
- Bioinstrumentation