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Influence of structural defects in solution-processed InZnO semiconductors on the electrical stability of thin-film transistors

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Abstract

In this study, we investigate the morphological effect of solution-processed indium-zinc-oxide (InZnO) active layers on the electrical stability of InZnO thin-film transistors (TFTs). We first observe that in the spin-coating method, precursor agglomerates and aggregates remain on the substrates after spin coating an InZnO solution at a low spin speed, thereby causing particle-type morphological defects in the InZnO films. The morphological defects are proven to degrade the basic performance parameters of the InZnO TFTs, including the electrical current level, field-effect mobility, and threshold voltage. In addition, devices having morphological defects show a relatively large hysteresis in transfer characteristics compared to those without defects. In a test of the electrical stability over time, we determine that particle-type morphological defects cause a rapid increase in the conductivity of the InZnO films, which affects the variations in the saturation drain current and the threshold voltage.

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Authors and Affiliations

  1. Department of Electronic Engineering, Hallym University, Chuncheon, 24252, Korea

    Hyeonju Lee, Chintalapalli Jyothi & Sungkeun Baang

  2. School of Electronics Engineering, Kyungpook National University, Daegu, 41566, Korea

    Jin-Hyuk Kwon & Jin-Hyuk Bae

Authors
  1. Hyeonju Lee
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  2. Chintalapalli Jyothi
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  3. Sungkeun Baang
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  4. Jin-Hyuk Kwon
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  5. Jin-Hyuk Bae
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Correspondence to Sungkeun Baang.

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These authors contributed equally to this work.

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Lee, H., Jyothi, C., Baang, S. et al. Influence of structural defects in solution-processed InZnO semiconductors on the electrical stability of thin-film transistors. Journal of the Korean Physical Society 69, 1688–1693 (2016). https://doi.org/10.3938/jkps.69.1688

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  • DOI: https://doi.org/10.3938/jkps.69.1688

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