Abstract
We have investigated the effects of nitrogen in the Ga(N)As barrier of an 1.5-μm-emitting GaIn- NAsSb quantum well (QW) on the localization and the defect density. The QW with the GaNAs barrier emitted brighter photoluminescence at a longer wavelength at 10 K than the GaAs barrier and showed less carrier localization. The lifetime at 10 K was almost the same for the QWs both with and without nitrogen in the barrier, implying comparable defect densities. This result clearly supports that GaInNAsSb QWs with a GaNAs barrier can emit light at a longer wavelength without increasing either the defect density or the localization.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
J. S. Harris et al., Phys. Stat. Sol. (b) 244, 2707 (2007).
V.-M. Korpijarvi, E. L. Kantola, T. Leinonen, R. Isoaho and M. Guina, IEEE J. Sel. Top. Quant. 21, 1700705 (2015).
S. R. Bank, H. Bae, L. L. Goddard, H. B. Yuen, M. A. Wistey, R. Kudrawiec and J. S. Harris, IEEE J. Quantum Elect. 43, 773 (2007).
D. B. Jackrel, S. R. Bank, H. B. Yuen, M. A. Wistey, J. S. Harris, A. J. Ptak, S. W. Johnston, D. J. Friedman and S. R. Kurtz, J. Appl. Phys. 101, 114916 (2007).
M. L. Du, J.-C. Harmand, O. Mauguin, L. Largeau, L. Travers, and J.-L. Oudar, Appl. Phys. Lett. 88, 201110 (2006).
X. Yang, M. J. Jurkovic, J. B. Heroux and W. I. Wang, Appl. Phys. Lett. 75, 178 (1999).
K. Volz, V. Gambin, W. Ha, M. A. Wistey, H. Yuen, S. R. Bank and J. S. Harris, J. Cryst. Growth 251, 360 (2003).
R. Kudrawiec, M. Motyka, M. Gladysiewicz, J. Misiewicz, H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey and J. S. Harris, Appl. Phys. Lett. 88, 221113 (2006).
R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz and J. Misiewicz, phys. stat. sol. (a) 204, 364 (2007).
R. Kudrawiec, H. B. Yuen, S. R. Bank, H. P. Bae, M. A. Wistey, J. S. Harris, M. Motyka, M. Gladysiewicz and J. Misiewicz, phys. stat. sol. (c) 5, 473 (2008).
H. B. Yuen, S. R. Bank, H. Bae, M. A. Wistey and J. S. Harris, Appl. Phys. Lett. 88, 221913 (2006).
S. R. Bank, M. A. Wistey, H. B. Yuen, L. L. Goddard, W. Ha and J. S. Harris, Electron. Lett. 39, 1445 (2003).
N. Tansu, J.-Y. Yeh and L. J. Mawst, Appl. Phys. Lett. 83, 2512 (2003).
H. F. Liu and N. Xiang, J. Appl. Phys. 99, 053508 (2006).
L. H. Li, G. Patriarche, A. Lemaitre, L. Largeau, L. Travers and J. C. Harmand, J. Cryst. Growth 251, 403 (2003).
R. Kudrawiec, G. Sek, D. Gollub, A. Forchel and J. Misiewicz, Appl. Phys. Lett. 83, 2772 (2003).
H. F. Liu and N. Xiang, J. Appl. Phys. 99, 053508 (2006).
Y.-H. Cho, G. H. Gainer, A. J. Fischer, J. J. Song, S. Keller, U. K. Mishra and S. P. DenBaars, Appl. Phys. Lett. 73, 1370 (1998).
H. P. Xin, K. L. Kavanagh, Z. Q. Zhu and C. W. Tu, Appl. Phys. Lett. 74, 2337 (1999).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Jang, Y.D., Nguyen, D.H., Park, J. et al. Effects of nitrogen in the Ga(N)As barrier of GaInNAsSb quantum wells. Journal of the Korean Physical Society 68, 583–586 (2016). https://doi.org/10.3938/jkps.68.583
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.68.583