Abstract
An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the Γ-shaped gate with the “head” of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the “foot” of the gate which showed a possibility for a gate length reduction.
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Cho, K.J., Ahn, H.K., Kim, S.I. et al. Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs. Journal of the Korean Physical Society 67, 682–686 (2015). https://doi.org/10.3938/jkps.67.682
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DOI: https://doi.org/10.3938/jkps.67.682