Abstract
This paper investigates the DC and RF performance of a gate field plate (GFP) and proposed grated gate field plate (GGFP) AlGaN/GaN high electron mobility transistor (HEMT) with a gate length of \(\mathrm{0.25}\) \(\upmu \) m through experimentally calibrated simulations. The GFP HEMT technology enhances breakdown voltage but influences the capacitive nature of the device with parasitic capacitance, particularly Miller’s capacitance, into action reducing its radio frequency and switching performance. To improve the electrical operation of a GFP HEMT, a grated gate field plate (GGFP) HEMT structure is proposed which exhibits operational improvements in terms of output current (1 A/mm), transconductance (350 mS/mm), and at the same time, reduces the parasitic capacitance effectively. We observe a 60% improvement in cut off frequency of the proposed GGFP HEMT (28.3 GHz) with respect to GFP HEMT (17.6 GHz) with little decrease in breakdown voltage. This study shows that the proposed device structure (GGFP HEMT) due to its effective capacitance reduction has better suitability and is a viable technique for future radio frequency applications.
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U.K. Mishra, L. Shen, T.E. Kazior, and Y. Wu, Proceedings of the IEEE 96, 287 (2008)
O. Ambacher, J. Smart, J.R. Shealy, N.G. Weimann, K. Chu, M. Murphy, W.J. Schaff, L.F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999)
J.P. Ibbetson, P.T. Fini, K.D. Ness, S.P. DenBaars, J.S. Speck, and U.K. Mishra, App. Phys. Lett. 77, 250 (2000)
D. Visalli, M. Van Hove, P. Srivastava, J. Derluyn, J. Das, M. Leys, S. Degroote, K. Cheng, M. Germain, and G. Borghs, Appl. Phys. Lett. 97, 113501 (2010)
T. Kabemura, S. Ueda, Y. Kawada, and K. Horio, IEEE Trans. Electron Devices 65, 3848 (2018)
N. Maeda, M. Hiroki, N. Watanabe, Y. Oda, H. Yokoyama, T. Yagi, T. Makimoto, T. Enoki, and T. Kobayashi, Jpn. J. Appl. Phys. 46, 547 (2007)
Y. Tang, K. Shinohara, D. Regan, A. Corrion, D. Brown, J. Wong, A. Schmitz, H. Fung, S. Kim, and M. Micovic, IEEE Electron Device Lett. 36, 549 (2015)
M.A. Alim, A.A. Rezazadeh, and C. Gaquiere, Semicond. Sci. and Technol. 30, 125005 (2015)
A.M. Bhat, N. Shafi, and C. Periasamy, 3rd International Conference on Electronics, Materials Engineering NanoTechnology (IEMENTech), (2019), p.1.
S. Karmalkar, and U.K. Mishra, IEEE trans. Electron Devices 48, 1515 (2001)
M. Amit, D.S. Rawal, S. Sharma, S. Kapoor, R. Liashram, R.K. Chaubey, S. Vinayak, and R.K. Sharma, Defence Sci. J. 68(3), 290 (2018)
Y.W. Lian, Y.S. Lin, H.C. Lu, Y.C. Huang, and S.S.H. Hsu, IEEE Trans. Electron Devices 62(2), 519 (2015)
E. Bahat-Treidel, O. Hilt, F. Brunner, V. Sidorov, J. Wurfl, and G. Trankle, IEEE Trans. Electron Devices 57, 1208 (2010)
J. Luo, S.-L. Zhao, Z.-Y. Lin, J.-C. Zhang, X.-H. Ma, and Y. Hao, Chinese Phys. Lett. 33, 067301 (2016)
E. Bahat-Treidel, F. Brunner, O. Hilt, E. Cho, J. Wurfl, and G. Trankle, IEEE Trans. Electron Devices 57, 3050 (2017)
E. Bahat-Treidel, O. Hilt, F. Brunner, J. Wurfl, and G. Trankle, IEEE Trans. Electron Devices 55(12), 3354 (2008)
P. Murugapandiyan, A. Mohanbabu, V.R. Lakshmi, M. Wasim, and K.M. Sundaram, J. Electron Mater. 49(1), 524 (2020)
A. Ray, S. Bordoloi, B. Sarkar, P. Agarwal, and G. Trivedi, J. Electron Mater. 49(3), 2018 (2020)
K. Xu, phys. status solidi (a) 216(7), 1800868 (2019)
D. Visalli, M. Van Hove, J. Derluyn, P. Srivastava, D. Marcon, J. Das, M.R. Leys, S. Degroote, K. Cheng, E. Vandenplas, M. Germain, and G. Borghs, IEEE Trans. Electron Devices 57, 3333 (2010)
H.T. Kwak, S.B. Chang, H.-J. Kim, K.W. Jang, H. Yoon, S.H. Lee, J.W. Lim, and H.S. Kim, Appl. Sci. 8, 974 (2018)
K.J. Cho, H.K. Ahn, S.I. Kim, D.M. Kang, J.M. Lee, B.G. Min, S.H. Lee, D.Y. Kim, H.S. Yoon, H.C. Kim, K.H. Lee, C.W. Ju, J.W. Lim, Y.H. Kwon, and E.S. Nam, J. Korean Phys. Soc. 67(4), 682 (2015)
H. Huang, Y.C. Liang, G.S. Samudra, T. Chang, and C. Huang, IEEE Trans. Power Electron. 29, 2164 (2014)
B. Liao, Q. Zhou, J. Qin, and H. Wang, Electronics 8(4), 406 (2019)
N.K. Subramani, J. Couvidat, A.A. Hajjar, J. Nallatamby, R. Sommet, and R. Quere, IEEE Electron Device Lett. 5, 175 (2017)
N.K. Subramani, J. Couvidat, A.A. Hajjar, J. Nallatamby, and R. Quere, IEEE J. Electron Devices Soc. 39, 107 (2018)
W. Yao, L. Wang, F. Li, Y. Meng, S. Yang, and Z. Wang, Semicond. Sci. Technol. 34(12), 125006 (2019)
A. Toprak, S. Osmanoglu, M. Ozturk, D. Yilmaz, Omer Cengiz, Ozlem Sen, B. Butun, S. Ozcan, and E. Ozbay, Semicond. Sci. and Technol. 33, 125017 (2018)
K. Lee, K. Ko, S. Lee, and K. Yang, Asia-Pacific Microwave Conference, p. 1019 (2006).
M.J. Uren, K.J. Nash, R.S. Balmer, T. Martin, E. Morvan, N. Caillas, S.L. Delage, D. Ducatteau, B. Grimbert, and J.C. De Jaeger, IEEE Trans. Electron Devices 53, 395 (2006)
H. Chiu, C. Yang, H. Wang, F. Huang, H. Kao, and F. Chien, IEEE Trans. Electron Devices 60, 3877 (2013)
G. Meneghesso, M. Meneghini, and E. Zanoni, Jpn. J. of Appl. Phys. 53, 100211 (2014)
A. Zhang, L. Zhang, Z. Tang, X. Cheng, Y. Wang, K.J. Chen, and M. Chan, IEEE Trans. Electron Devices 61, 755 (2014)
D. Cucak, M. Vasic, O. Garcia, Y. Bouvier, J. Oliver, P. Alou, J.A. Cobos, A. Wang, S. Martin-Horcajo, F. Romero, and F. Calle, IEEE Energy Conversion Congress and Exposition (ECCE) (2014), p. 2857
D. Cucak, M. Vasi, O. Garca, J. Angel Oliver, P. Alou, J. Antonio Cobos, A. Wang, S. Martin-Horcajo, M.F.Romero, and F. Calle, IEEE Trans. on Power Electronics 32(3), 2189 (2017).
K. Xu, J. Micromech. Microeng. 31, 054001 (2021)
S. Aamir Ahsan, S. Ghosh, S. Khandelwal, and Y.S. Chauhan, IEEE Trans. Electron Devices, 64, 816, (2017).
D.E. Ward, and R.W. Dutton, IEEE J. Solid-State Circuits 13, 703 (1978)
K. Sharma, A. Dasgupta, S. Ghosh, S. A. Ahsan, S. Khandelwal, and Y. S. Chauhan, IEEE International Conf. on Electron Devices and Solid-State Circuits (EDSSC), (2015), p.499, https://doi.org/10.1109/EDSSC.2015.7285160.
P. Murugapandiyan, M.T. Hasan, V.R. Lakshmi, M. Wasim, J. Ajayan, N. Ramkumar, and D. Nirmal, Int. J. Electron. (2020). https://doi.org/10.1080/00207217.2020.1849819
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Bhat, A.M., Shafi, N., Sahu, C. et al. Analysis of AlGaN/GaN HEMT and Its Operational Improvement Using a Grated Gate Field Plate. J. Electron. Mater. 50, 6218–6227 (2021). https://doi.org/10.1007/s11664-021-09151-9
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DOI: https://doi.org/10.1007/s11664-021-09151-9