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Back-thinning process research and characteristics measurement of thin sensor

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Abstract

It is important to develop a thin silicon detector using a large silicon wafer to reduce multiple Coulomb scattering and the material budget. A Si-CsI detector in a large acceptance multi-purpose spectrometer (LAMPS) is considered to identify isotopes. The thickness of the first of three silicon sensors in front of the CsI(Tl) crystal is 100 μm. We aim to establish a manufacturing process for thinning using a 6-inch silicon wafer that provides the characteristics of a photodiode. In this paper, we present a back-thinning process of the photodiode, and comparisons of its electrical characteristics and signal-to-noise ratios before and after the thinning process.

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Authors and Affiliations

  1. RSRI, Department of Physics, Kyungpook National University, Daejeon, 41566, Korea

    H. B. Jeon, K. H. Kang & H. Park

  2. Convergence Components and Materials Research Laboratory, ETRI, Daejeon, 34129, Korea

    Kun-Sik Park

Authors
  1. H. B. Jeon
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  2. K. H. Kang
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  3. H. Park
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  4. Kun-Sik Park
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Correspondence to H. Park.

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Jeon, H.B., Kang, K.H., Park, H. et al. Back-thinning process research and characteristics measurement of thin sensor. Journal of the Korean Physical Society 67, 2065–2069 (2015). https://doi.org/10.3938/jkps.67.2065

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  • DOI: https://doi.org/10.3938/jkps.67.2065

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