Abstract
A new technique of large-area thin ion implanted silicon detectors has been developed within the R&D performed by the FAZIA Collaboration. The essence of the technique is the application of a low-temperature baking process instead of high-temperature annealing. This thermal treatment is performed after B+ ion implantation and Al evaporation of detector contacts, made by using a single adjusted Al mask. Extremely thin silicon pads can be therefore obtained. The thickness distribution along the X and Y directions was measured for a prototype chip by the energy loss of α-particles from 241Am (〈E α 〉 = 5.5 MeV). Preliminary tests on the first thin detector (area ≈ 20 × 20 mm2) were performed at the INFN-LNS cyclotron in Catania (Italy) using products emitted in the heavy-ion reaction 84Kr (E = 35 A MeV) + 112Sn. The ΔE − E ion identification plot was obtained using a telescope consisting of our thin ΔE detector (21 μm thick) followed by a typical FAZIA 510 μm E detector of the same active area. The charge distribution of measured ions is presented together with a quantitative evaluation of the quality of the Z resolution. The threshold is lower than 2 A MeV depending on the ion charge.
Article PDF
Similar content being viewed by others
Avoid common mistakes on your manuscript.
References
R. Bougault et al., Eur. Phys. J. A 50, 47 (2014).
L. Bardelli et al., Nucl. Instrum. Methods A 605, 353 (2009).
S. Barlini et al., Nucl. Instrum. Methods A 707, 89 (2013).
L. Bardelli et al., Nucl. Instrum. Methods A 602, 501 (2009).
H. Hamrita et al., Nucl. Instrum. Methods A 531, 607 (2004).
L. Bardelli et al., Nucl. Instrum. Methods A 521, 480 (2004).
G. Pasquali et al., Nucl. Instrum. Methods A 570, 126 (2007).
G. Pasquali et al., Nucl. Instrum. Methods A 572, 882 (2007).
L. Bardelli et al., Nucl. Instrum. Methods A 654, 272 (2011).
S. Carboni et al., Nucl. Instrum. Methods A 664, 251 (2012).
N. Le Neindre et al., Nucl. Instrum. Methods A 701, 145 (2013).
E. Leagsgaard, Nucl. Instrum. Methods 169, 93 (1979).
J. Kemmer, Nucl. Instrum. Methods 169, 449 (1980).
A.J. Kordyasz et al., Nucl. Instrum. Methods A 570, 336 (2007).
L. Lavergne-Gosselin et al., Nucl. Instrum. Methods A 276, 210 (1989).
L. Stab, Nucl. Instrum. Methods A 288, 24 (1990).
A.J. Kordyasz et al., Nucl. Instrum. Methods A 539, 262 (2005).
L.C. Northcliffe R.F. Schilling, At. Nucl. Data Tables A 7, 223 (1970).
F. Hubert, R. Bimbot, H. Gauvin, Nucl. Data Tables 46, 1 (1990).
G. Pasquali et al., Eur. Phys. J. A 50, 86 (2014).
E. De Filippo, Rapport Dapnia-SphN-95-60 (1995).
G. Paush et al., IEEE Trans. Nucl. Sci. 44-3, 1040 (1997).
L. Bardelli, in Proceedings of the International Workshop on Multifragmentation IWM2005 (2005) 75.
Z. Sosin, Nucl. Instrum. Methods A 693, 170 (2012).
Author information
Authors and Affiliations
Corresponding author
Additional information
Communicated by H. Miyatake
This article is published with open access at Springerlink.com
Rights and permissions
Open Access This article is distributed under the terms of the Creative Commons Attribution 4.0 International License (https://creativecommons.org/licenses/by/4.0), which permits use, duplication, adaptation, distribution, and reproduction in any medium or format, as long as you give appropriate credit to the original author(s) and the source, provide a link to the Creative Commons license, and indicate if changes were made.
About this article
Cite this article
Kordyasz, A.J., Le Neindre, N., Parlog, M. et al. Low-temperature technique of thin silicon ion implanted epitaxial detectors. Eur. Phys. J. A 51, 15 (2015). https://doi.org/10.1140/epja/i2015-15015-2
Received:
Revised:
Accepted:
Published:
DOI: https://doi.org/10.1140/epja/i2015-15015-2