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Material analysis of the CZT crystal grown for a radiation detector

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Abstract

Room-temperature semiconductor radiation detectors, such as CdZnTe (CZT) and CdTe detectors, are being developed and grown worldwide owing to their high performances as a gamma-ray detector. A 2″ CZT ingot was grown using a 6-zone low-pressure (LP) Bridgman furnace at the Korea Atomic Energy Research Institute (KAERI). To increase the resistivity, indium (In) was doped at 5 ppm and 7 ppm, respectively. Material analysis results obtained by using inductively coupled plasma mass spectrometry (ICP-MS), X-ray diffractometry (XRD), and an infrared (IR) scope system were compared with the I-V results with respect to the location on the grown ingots and doping concentration. A (1,1,1) orientation and 1.41 × 1011 Ω·cm resistivity were measured in the middle part of the ingot. In addition, Te inclusions were also homogeneously shown. The variation in the I-V characteristics with respect to the preparation conditions of the crystals was also addressed.

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Correspondence to Han Soo Kim.

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Kim, H.S., Jeong, M., Kim, Y.S. et al. Material analysis of the CZT crystal grown for a radiation detector. Journal of the Korean Physical Society 66, 37–40 (2015). https://doi.org/10.3938/jkps.66.37

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  • DOI: https://doi.org/10.3938/jkps.66.37

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