Effect of NH₃ plasma passivation on the electrical characteristics of a nanolaminated ALD HfAlO on InGaAs MOS capacitor

Abstract

The electrical characteristics of a nanolaminated atomic layer deposition (ALD) HfAlO/InGaAs metal-oixde-semiconductor (MOS) capacitor with NH₃ plasma passivation are investigated. Results show that the samples with NH₃ plasma passivation exhibit better capacitance behavior with relatively small frequency dispersion in the inversion region than the unpassivated sample. The leakage current level of the NH3 plasma-passivated samples shows a much lower value compared to the unpassivated sample. The mid-gap value for the density of interface traps, D _it , also shows that NH3 plasma-passivated samples have relatively low values compared to the unpassivated sample. Superior electrical performance, compared to the unpassivated sample, was demonstrated with NH₃ plasma passivation through those electrical characterizations.