Abstract
We report a viable method for localizing a ferroelectric poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] film by using the transfer-print process. Micro-scaled topographic P(VDF-TrFE) patterns were successfully produced by using the transfer-print method, and the transferred films exhibited inherent ferroelectric properties. The characteristic improvements in the ferroelectric field-effect transistors (FeFETs) with respect to the operation voltage and the field-effect mobility could be achieved by using the transfer-print method to fabricate a ferroelectric insulator. The results suggest that transferring a ferroelectric film would be useful for realizing high-performance nonvolatile memory devices composed of FeFETs.
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Kim, WH., Jung, JH., Bae, JH. et al. Transfer printing of poly(vinylidene fluoride-trifluoroethylene) films for low-voltage ferroelectric field-effect transistors. Journal of the Korean Physical Society 66, 1013–1019 (2015). https://doi.org/10.3938/jkps.66.1013
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DOI: https://doi.org/10.3938/jkps.66.1013