Abstract
We comparatively investigated the crystal and the optical properties of nonpolar (10-10) ZnO films grown on m-plane sapphire substrates by using atomic layer deposition (ALD) and radio frequency (RF) magnetron sputtering. From high-resolution X-ray ω/2θ scans, the (100) peak of the ALD-grown ZnO film was clearly developed at ~ 15.9 ° while that of the RF sputter-grown ZnO was broadly observed at 15.6 ~ 15.9 °, indicating that a nonpolar (10-10) ZnO film would be preferentially grown on an m-plane sapphire substrate. The photoluminescence bandedge emission intensity of the ALD-grown (10-10) ZnO film was ten times higher than that of the RF sputtergrown ZnO film. In addition, the electroluminescence intensity of a semipolar (11–22) GaN-based light-emitting diode (LED) with an ALD-grown (10-10) ZnO film as a transparent conductive oxide material was much higher than that of a semipolar (11–22) GaN-based LED with RF sputter-grown (10-10) ZnO film.
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Choi, NJ., Son, HS., Choi, HJ. et al. Comparative studies of nonpolar (10-10) ZnO films grown by using atomic layer deposition and radio-frequency magnetron sputtering. Journal of the Korean Physical Society 65, 417–420 (2014). https://doi.org/10.3938/jkps.65.417
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DOI: https://doi.org/10.3938/jkps.65.417