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Properties of boron-doped ZnO thin films grown by using MOCVD

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Abstract

Boron-doped ZnO thin films were prepared by using metal organic chemical-vapor deposition (MOCVD) with diethyl zinc and water as precursors and B2H6 as the dopant gas. The effects of the flow rates of H2O and B2H6 on the growth and the electrical properties of boron-doped ZnO thin film were investigated. The maximum carrier concentration and mobility and the minimum resistivity obtained under these experimental conditions were 7 × 1020 /cm3, 42 cm2 /V·sec and 4 × 10−4 Ω·cm, respectively, at room temperature. The electrical properties, growth rates, transmittances, and surface morphologies of the ZnO:B films grown using MOCVD are strongly affected by growth conditions such as the relative flow rates of the precursors and dopant gases and the chamber pressure, and these effects are discussed in detail in this article.

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References

  1. K. Hummer, Phys. Status Solidi 56, 249 (1973).

    Article  Google Scholar 

  2. B. Lin, Z. Fu and Y. Jin, Appl. Phys. Lett. 79, 943 (2001).

    Article  ADS  Google Scholar 

  3. M. Kawasaki, A. Ohtomo, U. Okikubo, H. Koinuma, Z. K. Thang, P. Yu, G. K. L. Wong, B. P. Zhang and Y. Segawa, Mater. Sci. Eng. B 56, 239 (1998).

    Article  Google Scholar 

  4. M. Powalla and B. Dimmler, Sol Energy Mater. Sol. Cells 67, 337 (2001).

    Article  Google Scholar 

  5. K. Kushiya, M. Tachiyuki, Y. Nagoya, A. Fujimaki, B. Sang, D. Okumura, M. Satoh and O. Yamase, Sol. Energy Mater. Sol. Cells 67, 11 (2001).

    Article  Google Scholar 

  6. I. H. Choi and C. H. Choi, Thin Solid Films 525, 132 (2012).

    Article  ADS  Google Scholar 

  7. I. H. Choi, Thin Solid Films 525, 137 (2012).

    Article  ADS  Google Scholar 

  8. B. Sang, Y. Nagoya, K. Kushiya and O. Yamase, Sol. Energy Mater. and Sol. Cells 75, 179 (2003).

    Article  Google Scholar 

  9. M. L. Addonizio and C. Diletto, Sol. Energy Mater. & Sol. Cells 92, 1488 (2008).

    Article  Google Scholar 

  10. L. J. van der Pauw, Philips Res. Rep. 13, 1 (1958).

    Google Scholar 

Download references

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  1. Department of Physics, Chung-Ang University, Seoul, 156-756, Korea

    In-Hwan Choi

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  1. In-Hwan Choi
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Correspondence to In-Hwan Choi.

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Choi, IH. Properties of boron-doped ZnO thin films grown by using MOCVD. Journal of the Korean Physical Society 63, 1997–2001 (2013). https://doi.org/10.3938/jkps.63.1997

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  • DOI: https://doi.org/10.3938/jkps.63.1997

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