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Magnetism and transport properties of MnAs/GaAs hybrid structure

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Abstract

Epitaxial [MnAs(20 Å)/GaAs(t GaAs )]4, t GaAs = 100, 200 and 300 Å, hybrid multilayer were grown on GaAs(001) substrate using molecular beam epitaxy. Compared to bulk MnAs, the enhancement of the Curie temperature about 340 K was observed. By decreasing the GaAs spacer layer from 300 to 100 Å, the magnetization was found to increase from 48 to 163 emu/cm3 possibly due to enhanced exchange interaction in narrower space layer, while the coercive field decreased from 690 to 494 Oe. We have observed the variable range hopping conduction for all samples.

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Authors and Affiliations

  1. Department of Physics, University of Ulsan, Ulsan, 680-749, Korea

    Duong Van Thiet, Dang Duc Dung, Yooleemi Shin & Sunglae Cho

  2. Department of General Physics, School of Engineering Physics, Ha Noi University of Science and Technology, 1 Dai Co Viet road, Ha Noi, Viet Nam

    Duong Van Thiet & Dang Duc Dung

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  1. Duong Van Thiet
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  2. Dang Duc Dung
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  3. Yooleemi Shin
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  4. Sunglae Cho
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Correspondence to Sunglae Cho.

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Van Thiet, D., Dung, D.D., Shin, Y. et al. Magnetism and transport properties of MnAs/GaAs hybrid structure. Journal of the Korean Physical Society 62, 1485–1488 (2013). https://doi.org/10.3938/jkps.62.1485

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