Abstract
Herein, the effect of different TM (Co, Ni and Cu) doping on structural, optical and magnetic properties of ZnO nanostructures has been studied. Zn1−x TM x O (TM=Co, Ni and Cu) nanostructures were prepared by a microwave assisted chemical route and characterized by X-ray diffraction (XRD), field emission scanning electron microscopy, transmission electron microscopy (TEM), Raman spectroscopy, UV-Vis and magnetization measurements. XRD and TEM analyses showed that the TM-doped ZnO nanostructures had single phase nature with the wurtzite structure. Changes in the lattice volume, bandgap energy, morphology and the saturation magnetization of Zn1−x TM x O nanostructures were found to be dependent on the type of TM dopants. Lattice volume, bondlength and bandgap determined from XRD and UV-Vis, respectively, were found to decrease as the atomic number of the dopant increased from Co to Cu. Magnetic studies showed that all the TM-doped ZnO exhibited room temperature ferromagnetism and the decreasing trend of saturation magnetization was observed with the increase of 3d electrons number from Co to Cu.
Similar content being viewed by others
References
M. Johnson et al., J. Phys. Chem. B 109, 14278 (2005).
S. A. Wolf, D. D. Awschalom, R. Buhrman, J. M. Daughton, S. V. Molnar, M. L. Roukes, A. Y. Chtchelkanova and D. M. Treger, Science 294, 1488 (2001).
H. Ohno et al., Science 281, 951 (1998).
T. Fukumura, Y. Yamada, H. T. Oyosaki, T. Hasegawa, H. Koinuma and M. Kawasaki, Appl. Surf. Sci. 223, 62 (2004).
S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo and T. Steiner, Prog. Mater. Sci. 50, 293 (2005).
J. M. D. Coey, M. Venkatesan and C. B. Fitzgerald, Nat. Mater. 4, 173 (2005).
J. M. D. Coey, A. P. Douvalis, C. B. Fitzgerald and M. Venkatesan, Appl. Phys. Lett. 84, 1332 (2004).
Z. J. Wang, J. K. Tang, L. D. Tung, W. L. Zhou and L. Spinu, J. Appl. Phys. 93, 7870 (2003).
N. Y. H. Hong, J. Sakai and A. Hassini, Appl. Phys. Lett. 84, 2602 (2004).
J. J. Liu, M. H. Yu and W. L. Zhou, Appl. Phys. Lett. 87, 172505 (2005).
F. Ahmed, N. Arshi, M. S. Anwar, S. H. Lee, E. S. Byon, N. J. Lyu and B. H. Koo, Current Appl. Phys. 12, S174 (2012).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar, B. H. Koo and C. G. Lee, Microelectronic Engineering 89, 129 (2012).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar, B. H. Koo and C. G. Lee, J. Nanosci. Nanotechn. 12, 1386 (2012).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar and B. H. Koo, Cryst Eng Comm. 14, 4016 (2012).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar, S. N. Heo, G. W. Kim, J. Lu and B. H. Koo, J. Korean Phys. Soc. 60, 1644 (2012).
N. Theodoropoulou, A. Hebard, D. Norton, J. Budai, L. Boatner, J. Lee, Z. Khim, Y. Park, M. Overberg, S. Pearton and R. Wilson, Solid State Electron. 47, 2231 (2003).
A. Gupta, H. Cao, K. Parekh, K. Rao, A. Raju and U. Waghmare, J. Appl. Phys. 101, 09N513 (2007).
M. Venkatesan, C. B. Fitzgerald, J. G. Lunney and J. M. D. Coey, Phys. Rev. Lett. 93, 177206 (2004).
J. H. Kim, H. Kim, D. Kim, Y. E. Ihm and W. K. Choo, J. Appl. Phys. 92, 6066 (2002).
J. H. Park, M. G. Kim, H. M. Jang and S. Ryu, Appl. Phys. Lett. 84, 1338 (2004).
A. Sundaresan, R. Bhargavi, N. Rangrajan, U. Siddesh and C. N. R. Rao, Phys. Rev. B 74, 161306 (2006).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar, B. H. Koo and C. G. Lee, Funct. Mater. Lett. 4, 1 (2011).
M. A. Garcia, J. M. Merino, P. E. Fernndez, A. Quesada, J. Venta de la, M. L. Ruíz Gonzlez, G. R. Castro, P. Crespo, J. Llopis, J. M. Gonzlez-Calbet and A. Hernando, Nano Lett. 7, 1489 (2007).
F. Ahmed, S. Kumar, N. Arshi, M. S. Anwar, B. H. Koo and C. G. Lee, Thin Solid Films 519, 8199 (2011).
S. Kumar, Y. J. Kim, B. H. Koo, S. Gautam, K. H. Chae, R. Kumar and C. G. Lee, Mater. Lett. 63, 194 (2009).
J. Anghel, A. Thurber, D. A. Tenne, C. B. Hanna and A. Punnoose, J. Appl. Phys. 107, 09E314 (2010).
C. S. Barret and T. B. Massalski, Structure of Metals (Pergamon Press, Oxford, 1980).
H. Morkoc and U. Ozgur, Zinc Oxide: Fundamentals, Materials and Device Technology (Willey-VCH Verlag GmbH & Co. KGaA, Weinheim, 2009).
T. C. Damen, S. P. S. Porto and B. Tell, Phys. Rev. 142, 570 (1966).
C. Bundesmann, N. Ashkenov, M. Schubert, D. Spemann, T. Butz, E. M. Kaidashev, M. Lorenz and M. Grundmann, Appl. Phys. Lett. 83, 1074 (2003).
P. Parayanthal and F. H. Pollak, Phys. Rev. Lett. 52, 1822 (1984).
J. I. Pankove, Optical Processes in Semiconductors (Prentice-Hall Inc., Englewoord Cliffs, NJ (1971).
T. Fukumura, Y. Yamada, H. Toyosaki, T. Hasegawa, H. Koinuma and M. Kawasaki, Appl. Surf. Sci. 223, 62 (2004).
C. Zener et al., Phys. Rev. 81, 440 (1951).
A. Punnoose, J. Hays, A. Thurber, M. H. Engelhard, R. K. Kukkadapu, C. Wang, V. Shutthanandan and S. Thenvuthasan, Phys. Rev. B 72, 054402 (2005).
A. Thurber, K. M. Reddy, V. Shutthanandan, M. H. Engelhard and C. Wang, J. Hays, A. Punnoose, Phys. Rev. B 76, 165206 (2007).
C. Van Komen, A. Punnoose and M. S. Seehra, Solid State Commun. 149, 2257 (2009).
J. Hays, A. Punnoose, R. Baldner, M. H. Engelhard, J. Peloquin and K. M. Reddy, Phys. Rev. B 72, 075203 (2005).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Ahmed, F., Arshi, N., Anwar, M.S. et al. Effect of transition Metal (Co, Ni and Cu) doping on lattice volume, band gap, morphology and saturation magnetization of ZnO nanostructures. Journal of the Korean Physical Society 62, 1479–1484 (2013). https://doi.org/10.3938/jkps.62.1479
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.3938/jkps.62.1479