Abstract
Ultrathin doped layers, known as delta-doped layers, were introduced within the intrinsic amorphous silicon (a-Si) active layer to fabricate hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) with enhanced field-effect mobility. The performance of the delta-doped a-Si:H TFTs depended on the phosphine (PH3) flow rate and the distance from the n+ a-Si to the deltadoping layer. The delta-doped a-Si:H TFTs fabricated using a commercial manufacturing process exhibited an enhanced field-effect mobility of approximately ∼0.23 cm2/Vs (compared to a conventional a-Si:H TFT with 0.15 cm2/Vs) and a desirable stability under a bias-temperature stress test.
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Kim, P., Lee, K.M., Lee, EW. et al. A delta-doped amorphous silicon thin-film transistor with high mobility and stability. Journal of the Korean Physical Society 61, 1835–1839 (2012). https://doi.org/10.3938/jkps.61.1835
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DOI: https://doi.org/10.3938/jkps.61.1835