Abstract
Dielectric functions as continuous functions of temperature are useful for nondestructive in-situ monitoring of deposition and device design. Here, we present an analytic expression that accurately represents the dielectric function ɛ = ɛ 1 + iɛ 2 of InAs from 0.74 to 6.54 eV for temperatures from 22 to 675 K. We use the parametric model, which is known to accurately portray ɛ without unphysical assumptions. The parameters are obtained from ɛ spectra obtained on an InAs substrate by using spectroscopic ellipsometry. The dielectric function was successfully parameterized by using seven Gaussian-broadened polynomials.
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Kim, T.J., Hwang, S.Y., Byun, J.S. et al. Parametric model dielectric functions of InAs for temperatures from 22 to 675 K. Journal of the Korean Physical Society 61, 1821–1825 (2012). https://doi.org/10.3938/jkps.61.1821
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DOI: https://doi.org/10.3938/jkps.61.1821