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Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si

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Abstract

We report on magnetotransport results for an Al0.15Ga0.85N/GaN high-electron-mobility-transistor structure grown on a p-type Si (111) substrate. Our results show that there exists an approximately temperature (T)-independent point, which could be ascribed to a direct transition from a weak insulator to a high Landau level filling factor quantum Hall state, exists in the longitudinal resistivity ρ xx . The Hall resistivity decreases with increasing T, compelling experimental evidence for electron-electron interaction effects in a weakly-disordered two-dimensional (2D) system. We find that electron-electron interaction effects can be estimated and eliminated, giving rise to a corrected nominally temperature-independent Hall slope. By fitting the low-field magnetotransport data to conventional 2D weak localization theory, we find that the dephasing rate 1/τϕ is proportional to T. Moreover, 1/τϕ is finite as T → 0, evidence for zero-temperature dephasing in our system.

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References

  1. S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Matsushita, Y. Sugimoto and H. Kiyoku, Appl. Phys. Lett. 69, 3034 (1996).

    Article  ADS  Google Scholar 

  2. Y. F. Wu, B. P. Keller, S. Keller, D. Kapolnek, P. Kozodoy, S. P. Denbaars and U. K. Mishra, Appl. Phys. Lett. 69, 1438 (1996).

    Article  ADS  Google Scholar 

  3. I. H. Tan, C. Reaves, A. L. Holmes, Jr., E. L. Hu, J. E. Bowers and S. DenBaars, Electron. Lett. 31, 588 (1995).

    Article  ADS  Google Scholar 

  4. S. Nakamura, Proc. SPIE 2994, 2 (1997).

    Article  ADS  Google Scholar 

  5. H. Hasegawa, Curr. Appl. Phys. 7, 318 (2007).

    Article  ADS  Google Scholar 

  6. D. R. Hang, C.-T. Liang, J. R. Juang, T. Y. Huang, W. K. Hung, Y. F. Chen, G. H. Kim, J. H. Lee and J. H. Lee, J. Appl. Phys. 93, 2055 (2003).

    Article  ADS  Google Scholar 

  7. J. R. Juang, T.-Y. Huang, T.-M. Chen, M.-G. Lin, Y. Lee, C.-T. Liang, D. R. Hang, Y. F. Chen and J.-I. Chyi, J. Appl. Phys. 94, 3181 (2003).

    Article  ADS  Google Scholar 

  8. J. H. Chen et al., J. Korean Phys. Soc. 48, 1539 (2006).

    Google Scholar 

  9. K. S. Cho, T.-Y. Huang, C.-P. Huang, Y.-H. Chiu, C.-T. Liang, Y. F. Chen and I. Lo, J. Appl. Phys. 96, 7370 (2004).

    Article  ADS  Google Scholar 

  10. K. T. Wu et al., Physica E 32, 566 (2006).

    Article  ADS  Google Scholar 

  11. J. Y. Lin, J. H. Chen G.-H. Kim, H. Park, D. H. Youn, C. M. Jeon, J. M. Baik, J. L. Lee, C.-T. Liang and Y. F. Chen, J. Korean Phys. Soc. 49, 1130 (2006).

    Google Scholar 

  12. S.-K. Lin et al., J. Appl. Phys. 97, 046101 (2005).

    Article  ADS  Google Scholar 

  13. M. M. C. Chou, D. R. Hang, H. Kalisch, R. H. Jansen, Y. Dikme, M. Heuken and G. P. Yablonskii, J. Appl. Phys. 101, 103106 (2007).

    Article  ADS  Google Scholar 

  14. K. H. Baik, S.-M. Hwang, J.-H. Park, S.-H. Lee, H. Song, S. Lee, J. Jhin, J. Tak and J. Kim, J. Korean Phys. Soc. 56, 1140 (2010).

    Article  ADS  Google Scholar 

  15. H.-Y. Ryu, J. Korean Phys. Soc. 56, 1350 (2010).

    Article  ADS  Google Scholar 

  16. J.-I. Shim, H. Kim, D.-S. Shin and H.-Y. Yoo, J. Korean Phys. Soc. 58, 503 (2011).

    Article  Google Scholar 

  17. C.-A. Chang, T.-Y. Tang, P.-H. Chang, N.-C. Chen and C.-T. Liang, Jpn. J. Appl. Phys. 46, 2840 (2007).

    Article  ADS  Google Scholar 

  18. K. S. Cho, C.-T. Liang, Y. F. Chen and J. C. Fan, Semicond. Sci. Technol. 22, 870 (2007).

    Article  ADS  Google Scholar 

  19. H. J. Chang, Y. P. Hsieh, T. T. Chen, Y. F. Chen, C.-T. Liang, T. Y. Lin, S. C. Tseng and L. C. Chen, Opt. Express 15, 9357 (2007).

    Article  ADS  Google Scholar 

  20. K. S. Cho, C.-T. Liang, Y. F. Chen, K. S. Cho, C.-T. Liang, Y. F. Chen, Y. Q. Tang and B. Shen, Phys. Rev. B 75, 085327 (2007).

    Article  ADS  Google Scholar 

  21. A. Hariz, Proc. SPIE 3891, 82 (1999).

    Article  ADS  Google Scholar 

  22. S. Rajan, H. Xing, S. DenBaars, U. K. Mishra and D. Jena, Appl. Phys. Lett. 84, 1591 (2004).

    Article  ADS  Google Scholar 

  23. C. H. Kuo, H. C. Feng, C. W. Kuo, C. M. Chen, L. W. Wu and G. C. Chi, Appl. Phys. Lett. 90, 142115 (2007).

    Article  ADS  Google Scholar 

  24. S. D. Lester, F. A. Ponce, M. G. Craford and D. A. Steigerwald, Appl. Phys. Lett. 66, 1249 (1995).

    Article  ADS  Google Scholar 

  25. T. Metzger, R. Hopler and E. Born, Philos. Mag. A 77, 1013 (1998).

    Article  ADS  Google Scholar 

  26. A. Barski, U. Rössner, J. L. Rouvière and M. Arley, MRS Internet J. Nitride Semicond. Res. 1, 21 (1996).

    Google Scholar 

  27. S. Einfeldt, A. M. Roskowski, E. A. Preble and R. F. Davis, Appl. Phys. Lett. 80, 953 (2002).

    Article  ADS  Google Scholar 

  28. R. F. Davis, S. Einfeldt, E. A. Preble, A. M. Roskowski, Z. J. Reitmeier and P. Q. Miraglia, Acta Mater. 51, 5961 (2003).

    Article  Google Scholar 

  29. T. M. Katona, J. S. Speck and S. P. DenBaars, Appl. Phys. Lett. 81, 3558 (2002).

    Article  ADS  Google Scholar 

  30. C. Roder, H. Heinke, D. Hommel, T. M. Katona, J. S. Speck and S. P. DenBaars, J. Phys. D 36, A188 (2003).

    Article  ADS  Google Scholar 

  31. D. R. Hang, M. M. C. Chou, M. H. Hsieh and M. Heuken, J. Korean Phys. Soc. 50, 797 (2007).

    Article  ADS  Google Scholar 

  32. H. T. Chou, D. Goldhaber-Gordon, S. Schmult, M. J. Manfra, A. M. Sergent and R. J. Molnar, Appl. Phys. Lett. 89, 033104 (2006).

    Article  ADS  Google Scholar 

  33. J. J. Lin and J. P. Bird, J. Phys. Condens. Matter 14, R501 (2002), and references therein.

    Article  ADS  Google Scholar 

  34. R. B. Laughlin, Phys. Rev. Lett. 52, 2304 (1984).

    Article  ADS  Google Scholar 

  35. D. E. Khmelnitskii, Phys. Lett. 106A, 182 (1984).

    ADS  Google Scholar 

  36. S. Kivelson, D. H. Lee and S. C. Zhang, Phys. Rev. B 46, 2223 (1992).

    Article  ADS  Google Scholar 

  37. C. F. Huang, Y. H. Chang, C. H. Lee, H. T. Chou, H. D. Yeh, C.-T. Liang, Y. F. Chen, H. H. Lin, H. H. Cheng and G. J. Hwang, Phys. Rev. B 65, 045303 (2002).

    Article  ADS  Google Scholar 

  38. B. Huckestein, Phys. Rev. Lett. 84, 3141 (2000), and references therein.

    Article  ADS  Google Scholar 

  39. C.-T. Liang, K. Y. Chen, N. C. Chen, P. H. Chang and C.-A. Chang, Appl. Phys. Lett. 89, 132107 (2006).

    Article  ADS  Google Scholar 

  40. K. E. J. Goh, M. Y. Simmons and A. R. Hamilton, Phys. Rev. B 77, 235410 (2008), and references therein.

    Article  ADS  Google Scholar 

  41. G. Zala, B. N. Narozhny and I. L. Aleiner, Phys. Rev. B 64, 214204 (2001).

    Article  ADS  Google Scholar 

  42. K. H. Gao et al., J. Appl. Phys. 108, 063701 (2010).

    Article  ADS  Google Scholar 

  43. P. T. Coleridge, A. S. Sachrajda and P. Zawadzki, Phys. Rev. B 65, 125328 (2002).

    Article  ADS  Google Scholar 

  44. M. Y. Simmons, A. R. Hamilton, M. Pepper, E. H. Linfield, P. D. Rose and D. A. Ritchie, Phys. Rev. Lett. 84, 2489 (2000).

    Article  ADS  Google Scholar 

  45. Z. J. Qiu, Y. S. Gui, T. Lin, N. Dai, J. H. Chu, N. Tang, J. Lu and B. Shen, Phys. Rev. B 69, 125335 (2004).

    Article  ADS  Google Scholar 

  46. K. Y. Chen, C.-T. Liang, N. C. Chen, P. H. Chang and C.-A. Chang, Chin. J. Phys. 45, 616 (2007).

    Google Scholar 

  47. S. McPhail, C. E. Yasin, A. R. Hamilton, M. Y. Simmons, E. H. Linfield, M. Pepper and D. A. Ritchie, Phys. Rev. B 70, 245311 (2004).

    Article  ADS  Google Scholar 

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Authors and Affiliations

  1. Department of Physics, National Taiwan University, Taipei, 10617, Taiwan

    Zhi-Yao Zhang, Kuang Yao Chen, J. Z. Huang, Zhi-Hao Sun & C. -T. Liang

  2. Graduate Institute of Applied Physics, National Taiwan University, Taipei, 10617, Taiwan

    Shun-Tsung Lo & C. -T. Liang

  3. Department of Electrophysics, National Chiayi University, Chiayi, 60004, Taiwan

    Li-Hung Lin

  4. Institute of Electro-Optical Engineering, Chang Gang University, Tao-Yuan, 300, Taiwan

    N. C. Chen, Chin-An Chang & P. H. Chang

  5. Department of Materials and Mineral Resources Engineering, National Taipei University of Technology, Taipei, 106, Taiwan

    P. H. Chang

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  1. Zhi-Yao Zhang
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  4. Kuang Yao Chen
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Correspondence to Li-Hung Lin.

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Zhang, ZY., Lo, ST., Lin, LH. et al. Electrical measurements of an AlGaN/GaN high-electron-mobility transistor structure grown on Si. Journal of the Korean Physical Society 61, 1471–1475 (2012). https://doi.org/10.3938/jkps.61.1471

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