Abstract
The unusual observation of the Kondo effect in the two-dimensional electron gas (2DEG) of magnetically undoped AlGaN/GaN heterostructures is reported. The temperature-dependent zero-field resistivity data exhibits an upturn below 120 K, while the standard low-temperature weak localization and then weak antilocalization behaviour is revealed at T → 0. Magnetic transport investigations of the system are performed in the temperature range of 0.1–300 K and at magnetic fields up to 8 T, applied perpendicularly to the 2DEG plane. The experimental data are analyzed in terms of the multichannel Kondo model for d0 magnetic materials and weak localization theory taking into account the spin-orbit interaction.
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ACKNOWLEDGMENTS
This work was in part performed using equipment of the Resource Center of Electrophysical Methods of the National Research Center “Kurchatov Institute”. The low-temperature measurements were performed at the shared facilities center of the Lebedev Physical Institute, Russian Academy of Sciences. We thank Dr. Dmitrii Smirnov (National High Magnetic Field Laboratory, Tallahassee, FL 32310, United States) for help in performing measurements in a strong magnetic field and Prof. G.M. Min’kov for useful discussions of the results.
Funding
This study was supported by the Russian Foundation for Basic Research, project nos. 19-07-01090 and 20-07-00813.
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Translated by N. Korovin
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Chumakov, N.K., Chernykh, I.A., Davydov, A.B. et al. Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures. Semiconductors 54, 1150–1154 (2020). https://doi.org/10.1134/S1063782620090067
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DOI: https://doi.org/10.1134/S1063782620090067