Cost-effective fabrication of submicron patterns under low pressure over a large area

Abstract

The cost-effective fabrication of submicron patterns on a Si wafer under low pressure over a large area by using an ultraviolet-assisted nano-imprint lithography (UV-NIL) technique is reported. In this study an UV-NIL technique, using a normal MA6 mask aligner under low pressure, was applied to fabricate submicron patterns on a 6-inch-sized Si wafer with a feature size ranging from 350 nm to 2000 nm, a pattern depth of 800 nm, a thickness of the residual layer of less than 100 nm with good uniformity, and reproducibility over large areas. We also demonstrated the potential to apply the three-dimensional (3D) patterned imprint to a dual damascene process, which can then be reduced from a normal 14-step process to a 6-step process. Metallization of a 3D-patterned imprinted resist with metal paste was also demonstrated in this study.