Abstract
The cell characteristics of an alloy FePt nano-dot (ND) charge trapping memory with a high-k dielectric as a blocking oxide was investigated. Adoption of a high-k Al2O3 material as a blocking oxide for the metal nano-dot memory provided a superior scaling of the operation voltage compared to silicon oxide under a similar gate leakage level. For the 40-nm-thick high-k (Al2O3) blocking oxide, we confirmed an operation voltage reduction of ∼7 V under the same memory window on for silicon dioxide. Also, this device showed a large memory window of 7.8 V and a low leakage current under 10−10 A in an area of Φ 0.25 mm. From these results, the use of a dielectric (Al2O3) as a blocking oxide for a metal nano-dot device is essential, and a metal nano-dot memory with a high-k dielectric will be one of the candidates for a high-density non-volatile memory device.
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Lee, G.H., Lee, J.M., Yang, H.J. et al. Cell characteristics of FePt nano-dot memories with a high-k Al2O3 blocking oxide. Journal of the Korean Physical Society 60, 1902–1906 (2012). https://doi.org/10.3938/jkps.60.1902
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DOI: https://doi.org/10.3938/jkps.60.1902