Abstract
A three-dimensional (3D) silicon detector is an alternative semiconductor detector for high radiation environments. The 3D detector has several advantages such as radiation hardness so it can be used for a longer period of time in a high radiation environment without replacement. A dual-type 3D silicon detector is simulated, and the full depletion voltage, capacitance, response time and charge collection efficiency are measured.
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Choi, J., Lee, K. & Won, E. Simulation and characterization of a dual-type 3-dimensional silicon detector. Journal of the Korean Physical Society 60, 1862–1867 (2012). https://doi.org/10.3938/jkps.60.1862
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DOI: https://doi.org/10.3938/jkps.60.1862