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Catalyst-free ZnO on porous silicon grown by using vapor phase transport

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Abstract

Zinc oxide (ZnO) was grown on porous silicon (PS) by using vapor phase transport without a metal catalyst or seed layer. The structural and the optical properties of PS and of ZnO grown on PS were investigated using atomic force microscopy, scanning electron microscopy, X-ray diffraction, and photoluminescence. The residual stress of ZnO grown on PS could be relaxed and its structural and optical properties were improved with the introduction of a PS template as a substrate. In addition, the position of the UV emission peak for ZnO grown on PS was blue-shifted with increasing temperature. The coupling strength between excitons and LO phonons in ZnO grown on PS decreased with increasing temperature.

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Authors and Affiliations

  1. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, 621-749, Korea

    Min Su Kim & Jae-Young Leem

  2. Holcombe Department of Electrical and Computer Engineering, Center for Optical Materials Science and Engineering Technologies, Clemson University, Clemson, South Carolina, 29634, USA

    Do Yeob Kim & Sung-O Kim

  3. Epi R&D team, Samsung LED Co. Ltd., Suwon, 443-373, Korea

    Dong-Yul Lee

Authors
  1. Min Su Kim
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  2. Jae-Young Leem
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  3. Do Yeob Kim
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Correspondence to Jae-Young Leem.

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Kim, M.S., Leem, JY., Kim, D.Y. et al. Catalyst-free ZnO on porous silicon grown by using vapor phase transport. Journal of the Korean Physical Society 60, 1129–1134 (2012). https://doi.org/10.3938/jkps.60.1129

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  • DOI: https://doi.org/10.3938/jkps.60.1129

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